Oshima Nagayasu | National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8568, Japan

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概要

関連著者

Ohdaira Toshiyuki
National Inst. Advanced Industrial Sci. And Technol. (aist) Ibaraki Jpn
KINOMURA Atsushi
National Institute of Advanced Industrial Science and Technology
Suzuki Ryoichi
National Institute Of Advanced Industrial Science And Technology
TANAKA Yasunori
National Institute of Advanced Industrial Science and Technology (AIST)
Harada Shinsuke
National Institute Of Advanced Industrial Science And Technology Power Electronics Research Center:u
FUKUDA Kenji
National Institute of Advanced Industrial Science and Technology, Power Electronics Research Center
OSHIMA Nagayasu
National Institute of Advanced Industrial Science and Technology (AIST)
Kinomura Atsushi
National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8568, Japan
Kato Makoto
National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8568, Japan
Kinoshita Akimasa
National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8568, Japan
Oshima Nagayasu
National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8568, Japan
Fukuda Kenji
National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8568, Japan
Harada Shinsuke
National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8568, Japan

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著作論文

Positron Trapping Sites Originating from Oxide Interfaces on 4H-SiC C($000\bar{1}$)- and Si(0001)-Faces

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