Present Status and Future Prospect of Widegap Semiconductor High-Power Devices
スポンサーリンク
概要
- 論文の詳細を見る
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
著者
関連論文
- AIN/AlGaN/GaN Metal Insulator Semiconductor Heterostructure Field Effect Transistor
- Effects of High-k Passivation Films on AlGaN/GaN HEMT
- p-type InGaN Cap Layer for Normally-off Operation in AlGaN/GaN HFETs
- High Breakdown Voltage AlGaN/GaN MIS-HEMT with TiO_2/Si_3N_4 Gate Insulator
- High Speed AlGaN/GaN MIS-HEMT with High Drain and Gate Breakdown Voltages
- Temperature Characteristics AlGaN/GaN Heterojunction Field Effect Transistors
- Improved Contact Resistance in AlGaN/GaN Heterostructures by Titanium Distribution Control at the Metal-Semiconductor Interface
- Electrical Characteristics of Interface Defects in Oxides Grown at 1200℃ in Dry Oxygen Ambient on Silicon Carbide and Their
- Present Status and Future Prospect of Widegap Semiconductor High-Power Devices
- Structure Analysis of GaN Thin Film with Inversion Domains by High Voltage Atomic Resolution Microscopy
- Depth Profiling of Si/Si_Ge_x Structures by Micro-Raman Imaging
- The Electrical Characteristics of Metal-Oxide-Semiconductor Field Effect Transistors Fabricated on Cubic Silicon Carbide
- In situ Observation of Clusters in Gas Phase during 4H-SiC Epitaxial Growth by Chemical Vapor Deposition Method
- Improvement of AlGaN/GaN Heterostructure Field Effect Transistor Characteristics by Using Two-Step Ohmic Contact Process
- Modulation of Strain States in GaN Films by a Thin AlN/GaN Superlattice Interlayer Grown on Si(110) Substrates
- Novel Ion Implantation Process with High Heat Resistant Photoresist in Silicon Carbide Device Fabrication