Characterization of Polarity of Plasma-Assisted Molecular Beam Epitaxial GaN{0001}Film Using Coaxial Impact Collision Ion Scattering Spectroscopy

スポンサーリンク

概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 2000-02-01

著者

• Suzuki Y

  Showa Shell Sekiyu K.k. Kanagawa

• BALAKRISHNAN K.

  静岡大

• Balakrishnan K.

  静岡大学電子工学研究所

• Balakrishnan Krishnan

  名城大学理工学部材料機能工学科

• Suzuki Y

  Hitachi Ltd. Tokyo Jpn

• Suzuki Y

  Optoelectronic Division Electrotechnical Laboratory

• K バラクリシュナン

  静岡大学電子工学研究所

• OKUMURA Hajime

  Electrotechnical Laboratory (ETL)

• SONODA Saki

  ULVAC JAPAN, Ltd,

• SHIMIZU Saburo

  ULVAC JAPAN, Ltd

• SHIRAKASHI Jun-ichi

  Electrical and Electronic System Engineering, Tokyo University of Agriculture and Technology

• Okumura H

  National Inst. Advanced Industrial Sci. And Technol. Ibaraki Jpn

• Okumura H

  Electrotechnical Lab. Ibaraki Jpn

• Okumura H

  Neutron Scattering Laboratory Issp The University Of Tokyo

• Okumura Hajime

  Electrotechnical Laboratory

• Balakrishnan Krishnan

  Electrotechnical Laboratory

• SUZUKI Yoshifumi

  NTT Electrical Communications Laboratories

• Suzuki Yoshiichi

  Central Research And Development Laboratory Showa Shell Sekiyu K.k.

• Suzuki Yoshifumi

  Department Of Materials Science Faculty Of Engineering Kyushu Institute Of Technology

• Suzuki Yoshishige

  Joint Research Center For Atom Technology(jrcat)-national Institute For Advanced Interdisciplinary R

• Suzuki Yasuzou

  Nanotechnology Research Institute National Institute Of Advanced Industrial Science And Technology

• Sonoda S

  Lvac Inc.

• Sonoda Saki

  Ulvac Inc.

• Okunuma H

  National Institute Of Advanced Industrial Science And Technology

• Shimizu S

  R&d Association Of Future Electron Devices C/o National Institute Of Advanced Industrial Science

• Shimizu Saburo

  Ulvac Corporation

• Shirakashi Junichi

  Electrotechnical Laboratory

• SUZUKI Yasumasa

  ULVAC JAPAN, Ltd.

• Shirakashi Jun-ichi

  Electrotechnical Laboratory

関連論文

• GaSb/InSb/GaSbサンドウィッチ構造における溶解過程に及ぼす重力対流の役割
• 落下塔利用の微小重力環境下におけるInGaSb突起物形成過程のその場観察
• 落下塔利用による微小重力環境下における半導体の融解と凝固実験
• 落下塔利用による微小車力環境下における半導体の融解と凝固実験
• 航空機利用による微小重力環境下におけるInGaSb 半導体の結晶成長
• InSb融液中へのGaSb溶解に対する自然対流とマランゴニ対流効果
• Multiplexing Performance of Antiferroelectric Liquid Crystal Device
• Phase Transitions in an Antiferroelectric Liquid Crystal TFMHPOBC
• Switching Properties in Antiferroelectric Liquid Crystals : Optical Applications
• First-Principles Study on Piezoelectric Constants in Strained BN, AlN, and GaN
• 回転ブリッジマン法を用いたInGaSb結晶成長における炉内温度に対するアンプル回転効果の数値解析 : バルク成長III
• Antiferroelectric Liquid Crystals Having a Chiral Ring Structure
• Synthesis and Properties of Dimeric Antiferroelectric Liquid Crystals
• Synthesis of Aliphatic Polyurea Films by Vapor Deposition Polyrmerization and Their Piezoelectric Properties
• Tristable Switching in Surface Stabilized Ferroelectric Liquid Crystals with a Large Spontaneous Polarization : Condensed Matter
• Alignment Layers for Ferro and Antiferroelectric Liquid Crystal Cells
• Dielectric Behavior and the Devil's Staircase in the SmC^*_α Phase of an Antiferroelectric Liquid Crystal, 4-(1-methylheptyloxycarbonyl)phenyl 4' -octylearbonyloxybiphenyl-4-carboxylate
• Competition between Ferroelectric and Antiferroelectric Interactions Stabilizing Varieties of Phases in Binary Mixtures of Smectic Liquid Crystals
• Reentrant Antiferroelectric Phase in 4-(1-Methylheptyloxycarbonyl)phenyl 4'-Octylbiphenyl-4-Carboxylate
• Continuous Output Beam Steering in Vertical-Cavity Surface-Emitting Lasers with Two p-Type Electrodes by Controlling Injection Current Profile
• InAs組成変換基板上への高In組成比InGaAs成長 : エピキタシャル成長IV
• 組成変換InAs基板上への高In組成比・高品質In_xGa_Asブリッジ成長
• 組成変換InAs基板上への高In組成比・高品質In_xGa_Asブリッジ成長
• 組成変換InAs基板上への高In組成比・高品質In_xGa_Asブリッジ成長
• Study on the LPE growth of InGaAS pyramidal layers on (100) GaAs substrates
• Coalescence of ELO layers of InGaAS grown on patterned (111) GaAs by LPE
• 液相成長法による(100)GaAs基板上へのInGaAsピラミッド成長
• 液相成長法による(100)GaAs基板上へのInGaAsピラミッド成長
• 液相成長法による(100)GaAs基板上へのInGaAsピラミッド成長
• LPE growth of In_xGa_1-xSb pyramidal epilayer on GaSb(001) patterned substrate
• Growth of In_xGa_As Epilayers on Different Types of Patterned GaAs(100) Substrates
• Study on the LPE Growth of InxGaAs Bridge and ELO Layers on GaAs{111} Substrates
• EXPERIMENTAL AND NUMERICAL ANALYSES OF CRYSTALLIZATION PROCESSES OF In_Ga_Sb UNDER DIFFERENT GRAVITY CONDITIONS
• In Situ Formation of Ohmic Contact Electrodes of Cu and Ag onto the Fractured Surface of (Bi, Pb)-Sr-Ca-Cu-O Ceramics
• Dislocations in AlN Epilayers Grown on Sapphire Substrate by High-Temperature Metal-Organic Vapor Phase Epitaxy
• Advantages of AlN/GaN Metal Insulator Semiconductor Field Effect Transistor using Wet Chemical Etching With Hot Phosphoric Acid : Semiconductors
• Optimization of GaN Growth with Ga-Polarity by Referring to Surface Reconstruction Reflection High-Energy Electron Diffraction Patterns : Semiconductors
• High-Quality InGaN Films Grown on Ga-Polarity GaN by Plasma-Assisted Molecular-Beam Epitaxy
• Use of Multiple Paris of Gain and Saturable Absorber Regions for Semiconductor Optical-Pulse Compressor
• Essential Change in Crystal Qualities of GaN Films by Controlling Lattice Polarity in Molecular Beam Epitaxy
• Effect of Leakage Current on Pulse-Width Characteristic in Q-Switched Two-Section AlGaAs Multiple-Quantum-Well Semiconductor Lasers
• Characteristics of Cavity Round-Trip Time Pulses in Short-Cavity Q-Switched AlGaAs Multiple-Quantum-Well Semiconductor Lasers
• Crystal Growth of Hen Egg White Lysozyme under High Pressure
• Influence of Mn Incorporation on Molecular Beam Epitaxial Growth of GaMnN Film :Surfaces, Interfaces, and Films
• 落下塔利用による微小重力環境下における半導体の融解と凝固実験
• 航空機利用による微小重力環境下と地上におけるInGaSb半導体の結晶成長
• 航空機利用による微小重力環境下と地上におけるInGaSb半導体の結晶成長
• 航空機利用による微小重力環境下と地上におけるInGaSb半導体の結晶成長
• Characterization of Polarity of Wurtzite GaN Film Grown by Molecular Beam Epitaxy Using NH_3
• Lifetime and Spin Relaxation Time Measurements of Micro-Fabricated GaAs Tips
• Fabrication of GaAs Microtips and Their Application to Spin-Polarized Scanning Tunneling Microscope
• Growth of InxGa1-xAs EPilayers on Different Types of Patterned GaAs(100) Substrates
• Dielectric and Electrooptical Responses of Antiferroelectric Liquid Crystals in the Smectic-A Phase
• Influence of Optical Purity on the Smectic-C^*_β Phase of Antiferroelectric Liquid Crystals
• Annealing Properties of Defects in Ion-Implanted 3C-SiC Studied Using Monoenergetic Positron Beams
• Defects in Ion-Implanted 3C-SiC Probed by a Monoenergetic Positron Beam
• Selectively Doped n-InAlAs/InP Heterostructures Grown by MOCVD
• Growth of High-Mobility 3C-SiC Epilayers by Chemical Vapor Deposition : Semiconductors and Semiconductor Devices
• Photoluminescence of Unintentionally Doped and N-Doped 3C-SiC Grown by Chemical Vapor Deposition : Semiconductors and Semiconductor Devices
• Impact of H_2-Preannealing of the Sapphire Substrate on the Crystallinity of Low-Temperature-Deposited AlN Buffer Layer
• Study on the Seeded Growth of AlN Bulk Crystals by Sublimation
• Photoregulation of Tilt Angle of Nematic Liquid Crystals by Azobenzene Layers
• Characterization of Oxide Films on SiC by Spectroscopic Ellipsometry
• Infrared Radiation Detector with YBa_2Cu_3O_x Thin Film
• Comparison of Hydride Vapor Phase Epitaxy of GaN Layers on Cubic GaN/(100)GaAs and Hexagonal GaN/(111)GaAs Substrates
• Homoepitaxial Growth of Cubic GaN by Hydride Vapor Phase Epitaxy on Cubic GaN/GaAs Substrates Prepared with Gas Source Molecular Beam Epitaxy
• Energy-Dispersive Synchrotron Radiation Topographic Observation of InAs/GaAs Lattice-Mismatched Layer
• X-ray Penetration Depth for Large Lattice-Mismatched Heteroepitaxial Layer by Dynamical Diffraction Theory using Computer Simulation
• The Origin of Residual Carriers in CVD-Grown 3C-SiC : Semiconductors and Semiconductor Devices
• Comparison of Thin GaN and AlN Layers Deposited by Plasma Assisted Molecular Beam Epitaxy on 6H-SiC
• Interferometric Observation of the Interfacial Concentration Gradient Layers Around a Lysozyme Crystal
• Structural Analysis of Cubic GaN through X-Ray Pole Figure Generation
• Characterization of Polarity of Plasma-Assisted Molecular Beam Epitaxial GaN{0001}Film Using Coaxial Impact Collision Ion Scattering Spectroscopy
• Computer Simulation for Analysis of Lattice Polarity of Wurtzite GaN{0001} Film by Coaxial Impact Collision Ion Scattering Spectroscopy
• Terminating Structure of Plasma-Assisted Molecular Beam Epitaxial GaN{0001} Film Surface Identified by Coaxial Impact Collision Ion Scattering Spectroscopy
• Superconducting Current Density Profiles Estimated from the Flux Density Distribution in YBa_2Cu_3O_x Thin Films
• C-V Characteristics of MOS Structures Fabricated of Al-Doped p-Type 3C-SiC Epilayers Grown on Si by Chemical Vapor Deposition
• Control of Levitation in Electromagnetic Levitators under Microgravity
• Optical Constants of Cubic GaN, AlN, and AlGaN Alloys
• Elongated shaped Si Island Formation on 3C-SiC by Chemical Vapor Deposition and Its Application to Antiphase Domain Observation
• Atomically Flat 3C-SiC Epilayers by Low Pressure Chemical Vapor Deposition
• Scanning Capacitance Microscopy as a Characterization Tool for Semiconductor Devices
• Nitridation of Gaps (001) Surface Studied by Auger Electron Spectroscopy
• Nitridation of GaAs(001) Surface Studied by Auger Electron Spectroscopy
• Energy Shifts of Auger Transitions of Ga, As and N during Plasma-assisted Nitridation of GaAs (001) Surface
• Observation of Direct Band Gap Properties in Ge_nSi_m Strained-Layer Superlattices
• Influence of Gallium Sources on Impurity Doping in Gas Source MBE GaAs
• Photo-Ring-Opening Efficiency of 2,2-Diphenyl-2H-1-benzopyran Evaluated from Addition Reactivity of Amines to Its Ring-Opened Isomers
• Formation and Photo-initiated Addition-reaction of Chromenyl Polymer Films for Molecular Mounting
• Depth-Sensitive X-Ray Scattering Topographic Observation of InAs Grown by Molecular Beam Epitaxy on GaAs
• Chemical Bonding Properties of Cubic III-Nitride Semiconductors
• A Molecular and Jon-Beam Epitaxy System for the Growth of III-V Compound Semiconductors Using a Mass-Separated, Low-Energy Group-V Jon Beam
• Scanning Capacitance Microscopy as a Characterization Tool for Semiconductor Devices
• SiO_2/Si System Studied by Scanning Capacitance Microscopy
• Synthesis and Properties of Deuterated Antiferroelectric Liquid Crystals
• The Importance of the Electric Interaction for Stabilizing the Antiferroelectric Smectic Liquid-Crystalline Phase
• Raman Scattering Determination of Free Carrier Concentration and Surface Depletion Layer in (100) p-GaAs Grown by Molecular-Beam Epitaxy
• The Effect of Minor Elements on Exothermic Fusion Reaction to Form a Ti-Ni Intermetallic Compound
• High-Resolution X-Ray Scattering Topography Using Synchrotron Radiation Microbeam
• Development of Alignment Layer for Antiferroelectric Liquid Crystal Display Devices

もっと見る 閉じる

スポンサーリンク