Atomically Flat 3C-SiC Epilayers by Low Pressure Chemical Vapor Deposition
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1997-11-15
著者
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SEKIGAWA Toshihiro
Electrotechnical Laboratory
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Ishida Y
Kitakyushu Foundation For The Advancement Of Ind. Sci. And Technol. Kitakyushu Jpn
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OKUMURA Hajime
Electrotechnical Laboratory (ETL)
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Okumura H
National Institute Of Advanced Industrial Science And Technology Power Electronics Research Center
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Okumura H
Electrotechnical Lab. Ibaraki Jpn
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Okumura Hajime
Electrotechnical Laboratory
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YOSHIDA Sadafumi
Electrotechnical Laboratory
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TAKAHASHI Tetsuo
Electrotechnical Laboratory
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Takahashi Teruo
Department Of Organic And Polymeric Materials Tokyo Institute Of Technology
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Takahashi Tetsuo
National Institute Of Advanced Industrial Science And Technology Power Electronics Research Center
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Taguchi Tomohiro
Department Of Organic Materials Tokyo Institute Of Technology
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Takahashi Toshiaki
Department Of Environment And Mutation Research Institute For Radiation Biology And Medicine Hiroshi
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Sekigawa Toshihiro
Electron Devices Division Electrotechnical Laboratory
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Sekigawa Toshihiro
Electroinformatics Group Nanoelectronics Research Institute National Institute Of Advanced Industria
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Yoshida Sadafumi
Division Of Mathematics Electronics And Informatics Graduate School Of Science And Engineering Saita
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ISHIDA Yuuki
Electrotechnical Laboratory
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Takahashi T
Japan Advanced Institute Of Science And Technology
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Okunuma H
National Institute Of Advanced Industrial Science And Technology
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Sekigawa T
Electron Devices Division Electrotechnical Laboratory
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Takahashi T
Second Department Of Internal Medicine Hiroshima University School Of Medicine
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ISHIDA Yasuaki
Kinseki, Ltd.
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Takahashi T
Department Of Pediatrics Akita University Graduate School Of Medicine
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Takahashi Tsutomu
Department Of Energy Sciences The Graduate School At Nagatsuta Tokyo Institute Of Technology
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