Yoshida Sadafumi | Division Of Mathematics Electronics And Informatics Graduate School Of Science And Engineering Saita
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概要
- 吉田 慎也の詳細を見る
- 同名の論文著者
- Division Of Mathematics Electronics And Informatics Graduate School Of Science And Engineering Saitaの論文著者
関連著者
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Yoshida Sadafumi
Division Of Mathematics Electronics And Informatics Graduate School Of Science And Engineering Saita
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Ishida Y
Kitakyushu Foundation For The Advancement Of Ind. Sci. And Technol. Kitakyushu Jpn
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Okumura H
National Institute Of Advanced Industrial Science And Technology Power Electronics Research Center
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Okumura H
Electrotechnical Lab. Ibaraki Jpn
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Okunuma H
National Institute Of Advanced Industrial Science And Technology
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Hijikata Yasuto
Division Of Mathematics Electronics And Informatics Graduate School Of Science And Engineering Saita
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ISHIDA Yasuaki
Kinseki, Ltd.
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OKUMURA Hajime
Electrotechnical Laboratory (ETL)
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Okumura Hajime
Electrotechnical Laboratory
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伊藤 晴雄
千葉工業大学
著作論文
- Investigation of Positron Moderator Materials for Electron-Linac-Based Slow Positron Beamlines
- Electrical Characteristics of Interface Defects in Oxides Grown at 1200℃ in Dry Oxygen Ambient on Silicon Carbide and Their
- Measurements of the Depth Profile of the Refractive Indices in Oxide Films on SiC by Spectroscopic Ellipsometry
- Annealing Properties of Defects in Ion-Implanted 3C-SiC Studied Using Monoenergetic Positron Beams
- Defects in Ion-Implanted 3C-SiC Probed by a Monoenergetic Positron Beam
- Characterization of Oxide Films on SiC by Spectroscopic Ellipsometry
- Optical Constants of Cubic GaN, AlN, and AlGaN Alloys
- Elongated shaped Si Island Formation on 3C-SiC by Chemical Vapor Deposition and Its Application to Antiphase Domain Observation
- Atomically Flat 3C-SiC Epilayers by Low Pressure Chemical Vapor Deposition
- A Kinetic Model of Silicon Carbide Oxidation Based on the Interfacial Silicon and Carbon Emission Phenomenon