OHDAIRA Toshiyuki | Electrotechnical Laboratory
スポンサーリンク
概要
関連著者
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SUZUKI Ryoichi
Electrotechnical Laboratory
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OHDAIRA Toshiyuki
Electrotechnical Laboratory
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MIKADO Tomohisa
Electrotechnical Laboratory
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Ohdaira Toshiyuki
National Institute Of Advanced Industrial Science And Technology
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Suzuki R
National Institute Of Advanced Industrial Science And Technology
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Suzuki Ryoichi
National Institute Of Advanced Industrial Science And Technology
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Ohshima Takeshi
Japan Atomic Energy Research Institute (jaeri)
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Ohdaira Toshiyuki
National Institute Of Advanced Industrial Science And Technology (aist)
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Tanigawa Shoichiro
Institute Of Applied Physics University Of Tsukuba
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Ohgaki Takeshi
National Inst. For Materials Sci.
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Ohshima T
Japan Atomic Energy Res. Inst. Takasaki Jpn
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Uedono Akira
Institute of Applied Physics and Graduate School of Pure and Applied Sciences, University of Tsukuba, 1-1-1 Tennodai, Tsukuba 305-8573, Japan
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TANIGAWA Shoichiro
Institute of Materials Science, The University of Tsukuba
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UEDONO Akira
Institute of Materials Science, University of Tsukuba
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Ohdaira Toshiyuki
Department Of Nuclear Engineering Kyoto University
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Uedono A
Univ. Tsukuba Tsukuba Jpn
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Uedono Akira
Institute Of Applied Physics University Of Tsukuba
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MIKADO Tomohisa
National Institute of Advanced Industrial Science and Technology (AIST)
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Mikado Tomohisa
Photonics Research Institute National Institute Of Advanced Industrial Science And Technology
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Moriya Tsuyoshi
Institute Of Material Science University Of Tsukuba
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Tanigawa S
Institute Of Applied Physics University Of Tsukuba
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Mikado T
Electrotechnical Laboratory
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Ohgaki T
National Institute For Materials Science (nims)
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TOYAMA Masaharu
Toshiba Research and Development Center
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Mikado Tomohisa
Institute Of Materials Science University Of Tsukuba
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Kawano Takao
Radioisotope Center University Of Tsukuba
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KAWANO Takao
Radioisotope Center,University of Tsukuba
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Kitano T
Tokyo Electron Kyushu Ltd. Kumamoto Jpn
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Kawano T
Osaka Univ. Osaka Jpn
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Kawano T
Tokyo Electron Kyushu Ltd. Kumamoto Jpn
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Kitano T
Fundamental Research Laboratories Nec Corporation
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Kitano Tomohisa
Ulsi Device Development Laboratories Nec Corporation
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Moriya T
Institute Of Material Science University Of Tsukuba
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MORIYA Tsuyoshi
Institute of Materials Science, University of Tsukuba
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WATANABE Masahito
ULSI Device Development Laboratories, NEC Corporation
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Moriya T
Tokyo Metropolitan University Graduate School Of Engineering
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伊藤 晴雄
千葉工業大学
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ITOH Hisayoshi
Japan Atomic Energy Research Institute
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Itoh Hisayoshi
Japan Atomic Energy Agency
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OHSHIMA Takeshi
Japan Atomic Energy Research Institute
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Aoki Yasushi
Japan Atomic Energy Research Institute
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Aoki Y
Department Of Materials Development Japan Atomic Energy Research Institute
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Aoki Yuji
Superconductivity Research Laboratory Istec
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YOSHIKAWA Masahito
Japan Atomic Energy Research Institute, Takasaki Radiation Chemistry Research Establishment
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NASHIYAMA Isamu
Japan Atomic Energy Research Institute
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Yoshikawa Masahito
Japan Atomic Energy Research Institute (jaeri)
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Yoshikawa Masahito
Japan Atomic Energy Research Institute
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Aoki Y
Advanced Technology Research Center Kanagawa Institute Of Technology
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Komuro Naoyuki
Institute Of Materials Science University Of Tsukuba
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Nashiyama I
Japan Atomic Energy Research Institute
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Ohshima Takeshi
Japan Atomic Energy Agency
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FUJII Satoshi
Itami Research Laboratories. Sumitomo Electric Industries, Ltd.
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Ebe Hiroji
Nanoelectronics Collaborative Research Center (ncrc) Institute Of Industrial Science (iis) The Unive
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Ebe Hiroji
Fujitsu Laboratories Ltd.
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Itoh H
Japan Atomic Energy Research Institute Takasaki Radiation Chemistry Research Establishment
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Yoshikawa M
Department Of Electronics University Of Osaka Prefecture
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Ebe H
Univ. Tokyo Tokyo Jpn
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Watanabe M
Hiroshima Univ. Higashi‐hiroshima Jpn
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Tanaka M
Production Engineering Research Laboratory Hitachi Ltd.
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Tanaka M
Mitsubishi Electric Co. Ltd. Hyogo Jpn
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Tanaka Michiko
Tokyo University Of Agiculture And Technology Department Of Biotechnology
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NANAO Susumu
Institute of Industrial Sciences, The University of Tokyo
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Tanaka M
New Materials Research Center Sanyo Electric Co. Ltd.
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Fujii Syuitsu
Adtec Co. Ltd.
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OKUMURA Hajime
Electrotechnical Laboratory (ETL)
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Watanabe Mahiko
Department Of Applied Physics And Chemistry Faculty Of Engineering Hiroshima University
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Miyamoto Yoshihiro
Fujitsu Laboratories Ltd.
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Miyamoto Y
Kyushu Univ. Fukuoka Jpn
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Okumura H
National Institute Of Advanced Industrial Science And Technology Power Electronics Research Center
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Okumura H
Electrotechnical Lab. Ibaraki Jpn
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Okumura Hajime
Electrotechnical Laboratory
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Yamamoto K
Univ. Of Tsukuba
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Tanaka M
Manufacturing Development Center Mitsubishi Electric Corporation
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YOSHIDA Sadafumi
Electrotechnical Laboratory
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Tanaka M
Toshiba Corp. Kawasaki Jpn
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SHIKATA Shinichi
Itami Research Laboratories, Sumitomo Electric Industries, Ltd.
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TANAKA Masahiro
Fujitsu Laboratory Ltd.
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YAMAMOTO Kosaku
Fujitsu Laboratory Ltd.
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SHIOYA Yoshimi
Semiconductor Process Laboratory Co., Ltd.
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ISHIMARU Tomomi
Canon Sales Co., Inc.
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Yoshikawa Masaaki
Imra Material R & D Co Ltd.
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Yoshida Sadafumi
Division Of Mathematics Electronics And Informatics Graduate School Of Science And Engineering Saita
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HAMADA Kouji
ULSI Device Development Laboratories, NEC Corporation
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KOMURO Naoyuki
Institute of Materials Science, University of Tsukuba
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MURAMATSU Makoto
Institute of Applied Physics, University of Tsukuba
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UBUKATA Tomohiro
Institute of Applied Physics, University of Tsukuba
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TANINO Hirotoshi
Institute of Applied Physics, University of Tsukuba
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NAKANO Akihiko
Semiconductor Technology Academic Research Center
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YAMAMOTO Hidekazu
Semiconductor Technology Academic Research Center
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MIKADO Tomohisa
Semiconductor Technology Academic Research Center
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ISHIBASHI Shoji
Electrotechnical Laboratory
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MURAMATSU Makoto
National Institute of Advanced Industrial Science and Technology (AIST)
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Fujii Sadao
Central Research Laboratory Kanegafuchi Chemical Industry Co.
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Yamamoto K
Kaneka Corporation
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Fujii S
Matsushita Electronics Corp. Kyoto Jpn
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Tanaka M
Institute Of Multidisciplinary Research For Advanced Materials Tohoku University
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Yoshikawa M
Choshu Ind. Co. Ltd. Yamaguchi Jpn
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Hamada Kouji
Ulsi Device Development Laboratories Nec Corporation
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Nanao Susumu
Institute Of Industrial Science The University Of Tokyo
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Shioya Yoshimi
Semiconductor Process Laboratory Co. Ltd.
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Okunuma H
National Institute Of Advanced Industrial Science And Technology
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Furuta Shigeru
Department Of Electric And Computer Engineering Nagoya Institute Of Technology
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Miyamoto Y
Department Of Physical Electronics Tokyo Institute Of Technology
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Yamamoto K
Photonics Research Institute National Institute Of Advanced Industrial Science And Technology (aist)
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Taino M
Institute Of Multidisciplinary Research For Advanced Materials Tohoku University
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Shikata Shinichi
Itami Research Laboratories Sumitomo Electric Industries Ltd.
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Matsuzaki T
Department Of Applied Chemistry Faculty Of Engineering Himeji Institute Of Technology
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Ishimaru Tomomi
Canon Sales Co. Inc.
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Ubukata Tomohiro
Institute Of Applied Physics University Of Tsukuba
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Ishibashi S
Electrotechnical Laboratory
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Tanino Hirotoshi
Institute Of Applied Physics University Of Tsukuba
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Fujii S
Adtec Plasma Technol. Co. Ltd. Fukuyama Jpn
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Muramatsu M
Institute Of Applied Physics University Of Tsukuba
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Yamamoto K
Saga Univ. Saga Jpn
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Ohdaira Toshiyuki
Electrotechnical Laboratory, 1-1-4 Umezono, Tsukuba, Ibaraki 305, Japan
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Mikado Tomohisa
Electrotechnical Laboratory, 1-1-4 Umezono, Tsukuba, Ibaraki 305, Japan
著作論文
- Annealing Properties of Defects in Ion-Implanted 3C-SiC Studied Using Monoenergetic Positron Beams
- Defects in Ion Implanted Hg_Cd_Te Probed by Monoenergetic Positron Beams
- Pore Characteristics of Low-Dielectric-Constant Films Grown by Plasma-Enhanced Chemical Vapor Deposition Studied by Positron Annihilation Lifetime Spectroscopy : Instrumentation, Measurement, and Fabrication Technology
- Annealing Properties of Defects in B^+- and F^+-Implanted Si Studied Using Monoenergetic Positron Beams
- Fluorine-Related Defects in BF^+_2-Implanted Si Probed by Monoenergetic Positron Beams
- Effects of Recoil-Implanted Oxygen on Depth Profiles of Defects and Annealing Processes in P^+-Implanted Si Studied Using Monoenergetic Positron Beams
- Oxygen-Related Defects Introduced by As^+-Implantation through Cap Layers in Si Probed by Monoenergetic Positron Beams
- Investigation of Vacancy-Type Defects in P^+-Implanted 6H-SiC Using Monoenergetic Positron Beams
- Defects in TiN Films Probed by Monoenergetic Positron Beams
- Vacancy-Type Defects in Ion-Implanted Diamonds Probed by Monoenergetic Positron Beams
- Fluorine-Related Defects in BF2+-Implanted Si Probed by Monoenergetic Positron Beams