WATANABE Masahito | ULSI Device Development Laboratories, NEC Corporation
スポンサーリンク
概要
関連著者
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SUZUKI Ryoichi
Electrotechnical Laboratory
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MIKADO Tomohisa
Electrotechnical Laboratory
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Kawano Takao
Radioisotope Center University Of Tsukuba
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OHDAIRA Toshiyuki
Electrotechnical Laboratory
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Kitano Tomohisa
Ulsi Device Development Laboratories Nec Corporation
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Tanigawa Shoichiro
Institute Of Applied Physics University Of Tsukuba
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Moriya Tsuyoshi
Institute Of Material Science University Of Tsukuba
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WATANABE Masahito
ULSI Device Development Laboratories, NEC Corporation
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Uedono Akira
Institute of Applied Physics and Graduate School of Pure and Applied Sciences, University of Tsukuba, 1-1-1 Tennodai, Tsukuba 305-8573, Japan
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TANIGAWA Shoichiro
Institute of Materials Science, The University of Tsukuba
著作論文
- Fluorine-Related Defects in BF^+_2-Implanted Si Probed by Monoenergetic Positron Beams
- Effects of Recoil-Implanted Oxygen on Depth Profiles of Defects and Annealing Processes in P^+-Implanted Si Studied Using Monoenergetic Positron Beams
- Fluorine-Related Defects in BF2+-Implanted Si Probed by Monoenergetic Positron Beams