WATANABE Masahito | ULSI Device Development Laboratories, NEC Corporation
スポンサーリンク
概要
関連著者
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SUZUKI Ryoichi
Electrotechnical Laboratory
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MIKADO Tomohisa
Electrotechnical Laboratory
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Kawano Takao
Radioisotope Center University Of Tsukuba
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OHDAIRA Toshiyuki
Electrotechnical Laboratory
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Kitano Tomohisa
Ulsi Device Development Laboratories Nec Corporation
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Tanigawa Shoichiro
Institute Of Applied Physics University Of Tsukuba
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Moriya Tsuyoshi
Institute Of Material Science University Of Tsukuba
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WATANABE Masahito
ULSI Device Development Laboratories, NEC Corporation
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Uedono Akira
Institute of Applied Physics and Graduate School of Pure and Applied Sciences, University of Tsukuba, 1-1-1 Tennodai, Tsukuba 305-8573, Japan
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TANIGAWA Shoichiro
Institute of Materials Science, The University of Tsukuba
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UEDONO Akira
Institute of Materials Science, University of Tsukuba
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Ohdaira Toshiyuki
National Institute Of Advanced Industrial Science And Technology
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Ohdaira Toshiyuki
Department Of Nuclear Engineering Kyoto University
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Uedono A
Univ. Tsukuba Tsukuba Jpn
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Uedono Akira
Institute Of Applied Physics University Of Tsukuba
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KAWANO Takao
Radioisotope Center,University of Tsukuba
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Kitano T
Tokyo Electron Kyushu Ltd. Kumamoto Jpn
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Suzuki R
National Institute Of Advanced Industrial Science And Technology
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Kawano T
Osaka Univ. Osaka Jpn
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Moriya T
Institute Of Material Science University Of Tsukuba
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Suzuki Ryoichi
National Institute Of Advanced Industrial Science And Technology
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MIKADO Tomohisa
National Institute of Advanced Industrial Science and Technology (AIST)
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Kawano T
Tokyo Electron Kyushu Ltd. Kumamoto Jpn
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MORIYA Tsuyoshi
Institute of Materials Science, University of Tsukuba
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Kitano T
Fundamental Research Laboratories Nec Corporation
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Mikado Tomohisa
Photonics Research Institute National Institute Of Advanced Industrial Science And Technology
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Ohshima Takeshi
Japan Atomic Energy Research Institute (jaeri)
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Ohdaira Toshiyuki
National Institute Of Advanced Industrial Science And Technology (aist)
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Moriya T
Tokyo Metropolitan University Graduate School Of Engineering
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TOYAMA Masaharu
Toshiba Research and Development Center
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Komuro Naoyuki
Institute Of Materials Science University Of Tsukuba
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Ohgaki Takeshi
National Inst. For Materials Sci.
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Tanigawa S
Institute Of Applied Physics University Of Tsukuba
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Ohshima T
Japan Atomic Energy Res. Inst. Takasaki Jpn
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Mikado T
Electrotechnical Laboratory
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Ohgaki T
National Institute For Materials Science (nims)
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Mikado Tomohisa
Institute Of Materials Science University Of Tsukuba
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Watanabe M
Hiroshima Univ. Higashi‐hiroshima Jpn
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Watanabe Mahiko
Department Of Applied Physics And Chemistry Faculty Of Engineering Hiroshima University
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KOMURO Naoyuki
Institute of Materials Science, University of Tsukuba
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Ohdaira Toshiyuki
Electrotechnical Laboratory, 1-1-4 Umezono, Tsukuba, Ibaraki 305, Japan
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Mikado Tomohisa
Electrotechnical Laboratory, 1-1-4 Umezono, Tsukuba, Ibaraki 305, Japan
著作論文
- Fluorine-Related Defects in BF^+_2-Implanted Si Probed by Monoenergetic Positron Beams
- Effects of Recoil-Implanted Oxygen on Depth Profiles of Defects and Annealing Processes in P^+-Implanted Si Studied Using Monoenergetic Positron Beams
- Fluorine-Related Defects in BF2+-Implanted Si Probed by Monoenergetic Positron Beams