JIKIMOTO Tamotsu | Central Research Institute of Electric Power Industry
スポンサーリンク
概要
関連著者
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JIKIMOTO Tamotsu
Central Research Institute of Electric Power Industry
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TSUCHIDA Hidekazu
Central Research Institute of Electric Power Industry
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KAMATA Isaho
Central Research Institute of Electric Power Industry
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IZUMI Kunikazu
Central Research Institute of Electric Power Industry
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Izumi K
Central Res. Inst. Electric Power Ind. Kanagawa Jpn
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Jikimoto Tamotsu
Central Research Institute Of Electric Power Industry Yokosuka Research Laboratory
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伊藤 晴雄
千葉工業大学
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ITOH Hisayoshi
Japan Atomic Energy Research Institute
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Itoh H
Japan Atomic Energy Research Institute Takasaki Radiation Chemistry Research Establishment
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Itoh Hisayoshi
Japan Atomic Energy Agency
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Ishida Y
Kitakyushu Foundation For The Advancement Of Ind. Sci. And Technol. Kitakyushu Jpn
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OKUMURA Hajime
National Institute of Advance Industrial Science and Technology (AIST), Power Electronics Research C
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Okumura H
National Institute Of Advanced Industrial Science And Technology Power Electronics Research Center
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Okumura H
Electrotechnical Lab. Ibaraki Jpn
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Okumura H
Neutron Scattering Laboratory Issp The University Of Tokyo
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Okumura Hajime
National Inst. Of Advanced Sci. And Technol. Ibaraki Jpn
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YOSHIKAWA Masahito
Japan Atomic Energy Research Institute, Takasaki Radiation Chemistry Research Establishment
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ISHIDA Yuuki
National Institute of Advanced Industrial Science and Technology
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HIJIKATA Yasuto
Saitama University, Saitama-shi
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TAKAHASHI Tetsuo
National Institute of Advanced Industrial Science and Technology
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YOSHIDA Sadafumi
Saitama University, Saitama-shi
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Takahashi Teruo
Department Of Organic And Polymeric Materials Tokyo Institute Of Technology
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Jikimoto Tamotsu
Central Research Institute Of Electric Power Industry (criepi) Yokosuka Laboratory
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Takahashi Tetsuo
National Institute Of Advanced Industrial Science And Technology Power Electronics Research Center
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Taguchi Tomohiro
Department Of Organic Materials Tokyo Institute Of Technology
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Takahashi Toshiaki
Department Of Environment And Mutation Research Institute For Radiation Biology And Medicine Hiroshi
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Yoshida Sadafumi
Division Of Mathematics Electronics And Informatics Graduate School Of Science And Engineering Saita
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Yoshikawa Masahito
Japan Atomic Energy Research Institute (jaeri)
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Yoshikawa Masahito
Japan Atomic Energy Research Institute
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Takahashi T
Japan Advanced Institute Of Science And Technology
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Okunuma H
National Institute Of Advanced Industrial Science And Technology
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Tsuchida Hidekazu
Central Research Institute Of Electric Power Industry (criepi) Yokosuka Laboratory
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Takahashi T
Second Department Of Internal Medicine Hiroshima University School Of Medicine
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Hijikata Yasuto
Saitama University Saitama-shi
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Hijikata Yasuto
Division Of Mathematics Electronics And Informatics Graduate School Of Science And Engineering Saita
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Yoshida Sadafumi
Saitama University Saitama-shi
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KAMATA Isao
Central Research Institute of Electric Power Industry (CRIEPI), Yokosuka Laboratory
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IZUMI Kunimatsu
Central Research Institute of Electric Power Industry (CRIEPI), Yokosuka Laboratory
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Kamata Isao
Central Research Institute Of Electric Power Industry (criepi) Yokosuka Laboratory
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Izumi Kunimatsu
Central Research Institute Of Electric Power Industry (criepi) Yokosuka Laboratory
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ISHIDA Yasuaki
Kinseki, Ltd.
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Takahashi Toshiaki
Second Department Of Internal Medicine Hiroshima University School Of Medicine
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Takahashi T
Department Of Pediatrics Akita University Graduate School Of Medicine
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Takahashi Tsutomu
Department Of Energy Sciences The Graduate School At Nagatsuta Tokyo Institute Of Technology
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土方 泰斗
Japan Atomic Energy Research Institute, Takasaki Radiation Chemistry Research Establishment
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吉田 貞史
National Institute of Advanced Industrial Science and Technology
著作論文
- Electrical Characteristics of Interface Defects in Oxides Grown at 1200℃ in Dry Oxygen Ambient on Silicon Carbide and Their
- Improvement in Electrical Properties of 4H-SiC Epilayers by Micropipe Dissociation(Semiconductors)
- Structural Transformation of Screw Dislocations via Thick 4H-SiC Epitaxial Growth
- Influence of 4H-SiC Growth Conditions on Micropipe Dissociation : Semiconductors