Improvement in Electrical Properties of 4H-SiC Epilayers by Micropipe Dissociation(Semiconductors)

スポンサーリンク

概要

著者

関連論文

Specific Considerations on IEC Standardization of Externally Gapped Line Surge Arresters (EGLAs)
Electrical Characteristics of Interface Defects in Oxides Grown at 1200℃ in Dry Oxygen Ambient on Silicon Carbide and Their
Epitaxial Growth of Thick 4H-SiC Layers with a Reduced Micropipe Density in a Vertical Hot-Wall Reactor
Growth of Thick 4H-SiC(0001) Epilayers and Reduction of Basal Plane Dislocations
A study on the temperature rise characteristics of porcelain housed 154kV metal oxide surge arrester under artificial pollution tests
Improvement in Electrical Properties of 4H-SiC Epilayers by Micropipe Dissociation(Semiconductors)
Structural Transformation of Screw Dislocations via Thick 4H-SiC Epitaxial Growth
Epitaxial Growth of a Low-Doped 4H-SiC Layer on a Micropipe Stop Layer : Semiconductors
Si-H Bonds on the 6H -SiC(0001) Surface after H_2 Annealing
Chemical States of Crystalline Silicon Carbide Surfaces
Artificial Pollution Tests for Polymer-Housed Metal-Oxide Surge Arresters
Influence of 4H-SiC Growth Conditions on Micropipe Dissociation : Semiconductors
Development of 4H--SiC Epitaxial Growth Technique Achieving High Growth Rate and Large-Area Uniformity
Polarization of Photoluminescence from Partial Dislocations in 4H-SiC
Plan-View and Cross-Sectional Photoluminescence Imaging Analyses of Threading Dislocations in 4H-SiC Epilayers (Special Issue : Solid State Devices and Materials)
Suppression of Al Memory-Effect on Growing 4H-SiC Epilayers by Hot-Wall Chemical Vapor Deposition

もっと見る

スポンサーリンク