Influence of 4H-SiC Growth Conditions on Micropipe Dissociation : Semiconductors
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概要
- 論文の詳細を見る
In this study, we investigated the influence of 4H-SiC growth conditions on micropipe dissociation. The C/Si ratio of the reactant gases for chemical vapor deposition (CVD) epitaxial growth has a major influence on the probability of micropipe dissociation. A high probability of micropipe dissociation of over 98% was successfully obtained at a low C/Si ratio. We also investigated the surface morphology of 4H-SiC epilayers around dissociated and ontinuous micropipes grown under different C/Si growth conditions.
- 社団法人応用物理学会の論文
- 2002-10-15
著者
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JIKIMOTO Tamotsu
Central Research Institute of Electric Power Industry
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TSUCHIDA Hidekazu
Central Research Institute of Electric Power Industry
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KAMATA Isaho
Central Research Institute of Electric Power Industry
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Jikimoto Tamotsu
Central Research Institute Of Electric Power Industry (criepi) Yokosuka Laboratory
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Tsuchida Hidekazu
Central Research Institute Of Electric Power Industry (criepi) Yokosuka Laboratory
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KAMATA Isao
Central Research Institute of Electric Power Industry (CRIEPI), Yokosuka Laboratory
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IZUMI Kunimatsu
Central Research Institute of Electric Power Industry (CRIEPI), Yokosuka Laboratory
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Kamata Isao
Central Research Institute Of Electric Power Industry (criepi) Yokosuka Laboratory
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Izumi Kunimatsu
Central Research Institute Of Electric Power Industry (criepi) Yokosuka Laboratory
関連論文
- Electrical Characteristics of Interface Defects in Oxides Grown at 1200℃ in Dry Oxygen Ambient on Silicon Carbide and Their
- Epitaxial Growth of Thick 4H-SiC Layers with a Reduced Micropipe Density in a Vertical Hot-Wall Reactor
- Growth of Thick 4H-SiC(0001) Epilayers and Reduction of Basal Plane Dislocations
- Improvement in Electrical Properties of 4H-SiC Epilayers by Micropipe Dissociation(Semiconductors)
- Structural Transformation of Screw Dislocations via Thick 4H-SiC Epitaxial Growth
- Epitaxial Growth of a Low-Doped 4H-SiC Layer on a Micropipe Stop Layer : Semiconductors
- Si-H Bonds on the 6H -SiC(0001) Surface after H_2 Annealing
- Chemical States of Crystalline Silicon Carbide Surfaces
- Influence of 4H-SiC Growth Conditions on Micropipe Dissociation : Semiconductors
- Development of 4H--SiC Epitaxial Growth Technique Achieving High Growth Rate and Large-Area Uniformity
- Polarization of Photoluminescence from Partial Dislocations in 4H-SiC
- Plan-View and Cross-Sectional Photoluminescence Imaging Analyses of Threading Dislocations in 4H-SiC Epilayers (Special Issue : Solid State Devices and Materials)
- Suppression of Al Memory-Effect on Growing 4H-SiC Epilayers by Hot-Wall Chemical Vapor Deposition