Plan-View and Cross-Sectional Photoluminescence Imaging Analyses of Threading Dislocations in 4H-SiC Epilayers (Special Issue : Solid State Devices and Materials)
スポンサーリンク
概要
著者
-
TSUCHIDA Hidekazu
Central Research Institute of Electric Power Industry
-
KAMATA Isaho
Central Research Institute of Electric Power Industry
-
Nagano Masahiro
Central Research Institute of Electric Power Industry (CRIEPI), Yokosuka, Kanagawa 240-0196, Japan
-
Tsuchida Hidekazu
Central Research Institute of Electric Power Industry (CRIEPI), Yokosuka, Kanagawa 240-0196, Japan
関連論文
- Electrical Characteristics of Interface Defects in Oxides Grown at 1200℃ in Dry Oxygen Ambient on Silicon Carbide and Their
- Epitaxial Growth of Thick 4H-SiC Layers with a Reduced Micropipe Density in a Vertical Hot-Wall Reactor
- Atomic Layer Epitaxy of AlAs Using Dimethylethylamine Alane
- Growth of Thick 4H-SiC(0001) Epilayers and Reduction of Basal Plane Dislocations
- Improvement in Electrical Properties of 4H-SiC Epilayers by Micropipe Dissociation(Semiconductors)
- Structural Transformation of Screw Dislocations via Thick 4H-SiC Epitaxial Growth
- Epitaxial Growth of a Low-Doped 4H-SiC Layer on a Micropipe Stop Layer : Semiconductors
- Si-H Bonds on the 6H -SiC(0001) Surface after H_2 Annealing
- Chemical States of Crystalline Silicon Carbide Surfaces
- Influence of 4H-SiC Growth Conditions on Micropipe Dissociation : Semiconductors
- Development of 4H--SiC Epitaxial Growth Technique Achieving High Growth Rate and Large-Area Uniformity
- Polarization of Photoluminescence from Partial Dislocations in 4H-SiC
- Plan-View and Cross-Sectional Photoluminescence Imaging Analyses of Threading Dislocations in 4H-SiC Epilayers (Special Issue : Solid State Devices and Materials)
- Suppression of Al Memory-Effect on Growing 4H-SiC Epilayers by Hot-Wall Chemical Vapor Deposition