Growth of Thick 4H-SiC(0001) Epilayers and Reduction of Basal Plane Dislocations

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Electrical Characteristics of Interface Defects in Oxides Grown at 1200℃ in Dry Oxygen Ambient on Silicon Carbide and Their
Epitaxial Growth of Thick 4H-SiC Layers with a Reduced Micropipe Density in a Vertical Hot-Wall Reactor
Drift phenomena of forward and reverse recovery characteristics in {0001} 4H-SiC p-i-n diode (Special issue: Solid state devices and materials)
Growth of Thick 4H-SiC(0001) Epilayers and Reduction of Basal Plane Dislocations
Improvement in Electrical Properties of 4H-SiC Epilayers by Micropipe Dissociation(Semiconductors)
Structural Transformation of Screw Dislocations via Thick 4H-SiC Epitaxial Growth
Epitaxial Growth of a Low-Doped 4H-SiC Layer on a Micropipe Stop Layer : Semiconductors
Si-H Bonds on the 6H -SiC(0001) Surface after H_2 Annealing
Chemical States of Crystalline Silicon Carbide Surfaces
Power Loss Estimation Analysis Based on Experimental Power Switching Device Data for Three-Phase ARCP Assisted Soft Switching Inverter(Energy in Electronics Communications)
Influence of 4H-SiC Growth Conditions on Micropipe Dissociation : Semiconductors
Development of 4H--SiC Epitaxial Growth Technique Achieving High Growth Rate and Large-Area Uniformity
Polarization of Photoluminescence from Partial Dislocations in 4H-SiC
Plan-View and Cross-Sectional Photoluminescence Imaging Analyses of Threading Dislocations in 4H-SiC Epilayers (Special Issue : Solid State Devices and Materials)
Suppression of Al Memory-Effect on Growing 4H-SiC Epilayers by Hot-Wall Chemical Vapor Deposition

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