Drift phenomena of forward and reverse recovery characteristics in {0001} 4H-SiC p-i-n diode (Special issue: Solid state devices and materials)

スポンサーリンク

概要

• 論文の詳細を見る

著者

• Nakayama Koji

  The Kansai Electric Power Co. Inc.

関連論文

• Drift phenomena of forward and reverse recovery characteristics in {0001} 4H-SiC p-i-n diode (Special issue: Solid state devices and materials)
• Growth of Thick 4H-SiC(0001) Epilayers and Reduction of Basal Plane Dislocations

スポンサーリンク