Si-H Bonds on the 6H -SiC(0001) Surface after H_2 Annealing
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概要
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The Si -H bonds on the 6H -SiC(0001) on-axis surface were investigated using Fourier-transformed infrared at-tenuated total reflection (FTIR-ATR). The clear absorption bands of the Si -H stretching vibrations were observed from the 6H -SiC(0001) on-axis surface after H_2 annealing. The configuration of the Si -H bonds on the stnrface was discussed from the polarized spectra, the chemical characteristics and the electronegativities of the atoms bonded to the Si. The FTIR-ATR spectra suggested that the 6H -SiC(0001) on-axis surface after H_2 annealing at l00O℃ was primarily terminated by silicon monohydride with high regularity.
- 社団法人応用物理学会の論文
- 1997-06-01
著者
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IZUMI Kunikazu
Central Research Institute of Electric Power Industry
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TSUCHIDA Hidekazu
Central Research Institute of Electric Power Industry
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KAMATA Isaho
Central Research Institute of Electric Power Industry
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Izumi K
Central Res. Inst. Electric Power Ind. Kanagawa Jpn
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TSUCHIDA Hidekazu
Yokosuka Research Laboratory, Central Research Institute of Electric Power Industry
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KAMATA Isaho
Yokosuka Research Laboratory, Central Research Institute of Electric Power Industry
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IZUMI Kunikazu
Yokosuka Research Laboratory, Central Research Institute of Electric Power Industry
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