Epitaxial Growth of a Low-Doped 4H-SiC Layer on a Micropipe Stop Layer : Semiconductors
スポンサーリンク
概要
- 論文の詳細を見る
In this study we investigated a two-epilayer system, which consists of a high-doped micropipe stop (MS) layer and a low-doped active layer, for high-voltage 4H-SiC devices. Epitaxial growth of the 4H-SiC layers was performed using SiH_4 and C_3H_8 as the source gases. For MS layers, a high probability of micropipe dissociation is maintained for a wide range of n-type doping from mid 10^<15> to low 10^<19>cm^<-3> at a relatively low C/Si ratio of the source gases. Growth of a low-doped active layer on a MS layer is possible at a relatively high C/Si ratio without coalescence of elementary screw dislocations that are generated by the dissociation of micropipes in the MS layer. A large Ni/4H-SiC Schottky barrier diode (SBD) with a diameter of 11.2 mm (〜 1 cm^2) was fabricated using a MS layer and a low-doped active layer. The leakage current of the SBD at 1kV was 14mA, and the on-state voltage at 100A was 2.8V.
- 社団法人応用物理学会の論文
- 2002-11-15
著者
-
IZUMI Kunikazu
Central Research Institute of Electric Power Industry
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TSUCHIDA Hidekazu
Central Research Institute of Electric Power Industry
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KAMATA Isaho
Central Research Institute of Electric Power Industry
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Izumi K
Central Res. Inst. Electric Power Ind. Kanagawa Jpn
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