Epitaxial Growth of Thick 4H-SiC Layers with a Reduced Micropipe Density in a Vertical Hot-Wall Reactor
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概要
- 論文の詳細を見る
- 社団法人電子情報通信学会の論文
- 2003-04-01
著者
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IZUMI Kunikazu
Central Research Institute of Electric Power Industry
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Tawara Takeshi
Central Research Institute Of Electric Power Industry
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TSUCHIDA Hidekazu
Central Research Institute of Electric Power Industry
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KAMATA Isaho
Central Research Institute of Electric Power Industry
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IZUMI Syunsuke
Central Research Institute of Electric Power Industry
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Izumi K
Central Res. Inst. Electric Power Ind. Kanagawa Jpn
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