Development of 4H--SiC Epitaxial Growth Technique Achieving High Growth Rate and Large-Area Uniformity
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概要
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A vertical hot-wall epi-reactor that makes it possible to simultaneously achieve a high growth rate and large-area uniformity has been developed. A maximum growth rate of 250 μm/h is achieved with a mirror-like morphology at 1650 °C. Under a modified epi-reactor setup, a thickness uniformity of 1.1% and a doping uniformity of 6.7% for a 65-mm-radius area are achieved while maintaining a high growth rate of 79 μm/h. A low doping concentration of ${\sim}1\times 10^{13}$ cm-3 is obtained for a 50-mm-radius area. The low-temperature photoluminescence (LTPL) spectrum shows the predominance of free exciton peaks with only few impurity-related peaks and the L1 peak below detection limit. The deep level transient spectroscopy (DLTS) measurement for an epilayer grown at 80 μm/h shows low trap concentrations of Z1/2: $1.2\times 10^{12}$ and EH6/7: $6.3\times 10^{11}$ cm-3. A 280-μm-thick epilayer with a RMS roughness of 0.2 nm and a carrier lifetime of ${\sim}1$ μs is obtained.
- Japan Society of Applied Physicsの論文
- 2008-01-25
著者
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TSUCHIDA Hidekazu
Central Research Institute of Electric Power Industry
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Ito Masahiko
Central Research Institute of Electric Power Industry, 2-6-1 Nagasaka, Yokosuka, Kanagawa 240-0196,
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Storasta Liutauras
Central Research Institute of Electric Power Industry, 2-6-1 Nagasaka, Yokosuka, Kanagawa 240-0196,
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Storasta Liutauras
Central Research Institute Of Electric Power Industry
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Ito Masahiko
Central Research Institute Of Electric Power Industry
関連論文
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- Improvement in Electrical Properties of 4H-SiC Epilayers by Micropipe Dissociation(Semiconductors)
- Structural Transformation of Screw Dislocations via Thick 4H-SiC Epitaxial Growth
- Epitaxial Growth of a Low-Doped 4H-SiC Layer on a Micropipe Stop Layer : Semiconductors
- Si-H Bonds on the 6H -SiC(0001) Surface after H_2 Annealing
- Chemical States of Crystalline Silicon Carbide Surfaces
- Influence of 4H-SiC Growth Conditions on Micropipe Dissociation : Semiconductors
- Development of 4H--SiC Epitaxial Growth Technique Achieving High Growth Rate and Large-Area Uniformity
- Polarization of Photoluminescence from Partial Dislocations in 4H-SiC
- Plan-View and Cross-Sectional Photoluminescence Imaging Analyses of Threading Dislocations in 4H-SiC Epilayers (Special Issue : Solid State Devices and Materials)
- Suppression of Al Memory-Effect on Growing 4H-SiC Epilayers by Hot-Wall Chemical Vapor Deposition