Structural Transformation of Screw Dislocations via Thick 4H-SiC Epitaxial Growth

スポンサーリンク

概要

著者

関連論文

Specific Considerations on IEC Standardization of Externally Gapped Line Surge Arresters (EGLAs)
Electrical Characteristics of Interface Defects in Oxides Grown at 1200℃ in Dry Oxygen Ambient on Silicon Carbide and Their
Epitaxial Growth of Thick 4H-SiC Layers with a Reduced Micropipe Density in a Vertical Hot-Wall Reactor
Growth of Thick 4H-SiC(0001) Epilayers and Reduction of Basal Plane Dislocations
A study on the temperature rise characteristics of porcelain housed 154kV metal oxide surge arrester under artificial pollution tests
Improvement in Electrical Properties of 4H-SiC Epilayers by Micropipe Dissociation(Semiconductors)
Structural Transformation of Screw Dislocations via Thick 4H-SiC Epitaxial Growth
Epitaxial Growth of a Low-Doped 4H-SiC Layer on a Micropipe Stop Layer : Semiconductors
Si-H Bonds on the 6H -SiC(0001) Surface after H_2 Annealing
Chemical States of Crystalline Silicon Carbide Surfaces
Artificial Pollution Tests for Polymer-Housed Metal-Oxide Surge Arresters
Influence of 4H-SiC Growth Conditions on Micropipe Dissociation : Semiconductors
Development of 4H--SiC Epitaxial Growth Technique Achieving High Growth Rate and Large-Area Uniformity
Polarization of Photoluminescence from Partial Dislocations in 4H-SiC
Plan-View and Cross-Sectional Photoluminescence Imaging Analyses of Threading Dislocations in 4H-SiC Epilayers (Special Issue : Solid State Devices and Materials)
Suppression of Al Memory-Effect on Growing 4H-SiC Epilayers by Hot-Wall Chemical Vapor Deposition

もっと見る

スポンサーリンク