Suppression of Al Memory-Effect on Growing 4H-SiC Epilayers by Hot-Wall Chemical Vapor Deposition

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概要

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• Al memory-effect during the growth of p-type 4H-SiC by hot-wall chemical vapor deposition method was investigated. A technique of suppressing the unintentional Al impurities incorporating into succeeding growth was developed by utilizing ``site-competition'' growth technology. Lowering C/Si ratio from 1 to 0.4 effectively reduced the level of incorporated Al-impurity almost 3 orders, and a high abrupt Al distribution between Al-doped layer and undoped layer was obtained at a reduction factor about 1/17000 with Al-impurity concentration in the undoped layer decreased to the range of 10^{15} cm^-3. In addition, it is found that, due to low C/Si ratio, the nitrogen impurity concentration increases about one order of magnitude up to the order of 10^{16} cm^-3. Combining with site-competition growth technology, the influences of growth temperature and pressure on Al-impurity concentration were examined.

• 2013-04-25

著者

• OKUMURA Hajime

  Advanced Industrial Science and Technology (AIST), Power Electronics Research Center

• TSUCHIDA Hidekazu

  Central Research Institute of Electric Power Industry

• Kojima Kazutoshi

  Advanced Power Electronics Research Center, National Institute of Advanced Industrial Science and Technology, Tsukuba, Ibaraki 305-8568, Japan

• Ji Shiyang

  Advanced Power Electronics Research Center, National Institute of Advanced Industrial Science and Technology, Tsukuba, Ibaraki 305-8568, Japan

• Ishida Yuuki

  Advanced Power Electronics Research Center, National Institute of Advanced Industrial Science and Technology, Tsukuba, Ibaraki 305-8568, Japan

• Yoshida Sadafumi

  Advanced Power Electronics Research Center, National Institute of Advanced Industrial Science and Technology, Tsukuba, Ibaraki 305-8568, Japan

関連論文

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• Electrical Characteristics of Interface Defects in Oxides Grown at 1200℃ in Dry Oxygen Ambient on Silicon Carbide and Their
• Epitaxial Growth of Thick 4H-SiC Layers with a Reduced Micropipe Density in a Vertical Hot-Wall Reactor
• Growth of Thick 4H-SiC(0001) Epilayers and Reduction of Basal Plane Dislocations
• Improvement in Electrical Properties of 4H-SiC Epilayers by Micropipe Dissociation(Semiconductors)
• Structural Transformation of Screw Dislocations via Thick 4H-SiC Epitaxial Growth
• Epitaxial Growth of a Low-Doped 4H-SiC Layer on a Micropipe Stop Layer : Semiconductors
• Si-H Bonds on the 6H -SiC(0001) Surface after H_2 Annealing
• Chemical States of Crystalline Silicon Carbide Surfaces
• Influence of 4H-SiC Growth Conditions on Micropipe Dissociation : Semiconductors
• Development of 4H--SiC Epitaxial Growth Technique Achieving High Growth Rate and Large-Area Uniformity
• Gate-Length Dependence of DC Characteristics in Submicron-Gate AlGaN/GaN High Electron Mobility Transistors
• Characteristics of 4H-SiC n- and p-Channel Metal-Oxide-Semiconductor Field-Effect Transistors with Ion-Implanted Buried Channel (Special Issue : Solid State Devices and Materials (1))
• Fabrication and Electrical Properties of Thermally Oxidized p-Channel Metal--Oxide--Semiconductor Field-Effect Transistors on 4H-SiC C-Face
• Polarization of Photoluminescence from Partial Dislocations in 4H-SiC
• Coexistence of Small Threshold Voltage Instability and High Channel Mobility in 4H-SiC(0001) Metal-Oxide-Semiconductor Field-Effect Transistors
• Plan-View and Cross-Sectional Photoluminescence Imaging Analyses of Threading Dislocations in 4H-SiC Epilayers (Special Issue : Solid State Devices and Materials)
• Suppression of Al Memory-Effect on Growing 4H-SiC Epilayers by Hot-Wall Chemical Vapor Deposition

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