Chemical States of Crystalline Silicon Carbide Surfaces
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概要
- 論文の詳細を見る
Chemical states of 6H polytype crystalline silicon carbide (6H-SiC) surfaces were investigated using X-ray photoelectron spectroscopy (XPS). Surface contaminants such as C-C, C-H and C-O species were evaluated from C1s photoelectron spectra after treatment under various conditions. Clean SiC surfaces were found to appear after the chemical etching of a thermal oxide (SiO_2) film using a buffered HF solution. Furthermore, to clarify the chemical etching characteristics of SiO_2 formed on 6H-SiC substrates, the depth profiling of the SiO_2 was also performed using XPS. The C1s peak at a binding energy of about 286.2 eV was detected on the surfaces of the 6H-SiC substrates at the moment when only the SiO_2 was completely removed, and the C1s peak was characterized as due to the C-O bonds formed near the SiO_2/SiC interface.
- 社団法人応用物理学会の論文
- 1995-11-15
著者
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IZUMI Kunikazu
Central Research Institute of Electric Power Industry
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TSUCHIDA Hidekazu
Central Research Institute of Electric Power Industry
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KAMATA Isaho
Central Research Institute of Electric Power Industry
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Izumi K
Central Res. Inst. Electric Power Ind. Kanagawa Jpn
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TSUCHIDA Hidekazu
Yokosuka Research Laboratory, Central Research Institute of Electric Power Industry
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KAMATA Isaho
Yokosuka Research Laboratory, Central Research Institute of Electric Power Industry
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IZUMI Kunikazu
Yokosuka Research Laboratory, Central Research Institute of Electric Power Industry
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