Polarization of Photoluminescence from Partial Dislocations in 4H-SiC

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概要

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• Polarization characteristics of luminescence from partial dislocations (PDs) in 4H-SiC have been investigated by room-temperature photoluminescence (PL) imaging. The PLs from mobile PDs under optical excitation, which are 30°-Si(g) PDs, and PDs tilted by 6° from their Burgers vector (6°-PDs) were found to be polarized perpendicular to their dislocation lines. In contrast, the PL from immobile 30°-C(g) PDs was not polarized. The present results suggest that the carriers bound to the 30°-Si(g) and 6°-PDs have anisotropic wave functions and those bound to 30°-C(g) PDs have isotropic wave functions.

• 2013-01-25

著者

• Tajima Michio

  Institute Of Space And Astronautical Scienc

• TSUCHIDA Hidekazu

  Central Research Institute of Electric Power Industry

• Maeda Koji

  Department Of Applied Physics Faculty Of Engineering The University Of Tokyo:the Institute For Solid

• HIRANO Rii

  Institute of Space and Astronautical Science, Japan Aerospace Exploration Agency

• Maeda Koji

  Department of Applied Physics, The University of Tokyo, Bunkyo, Tokyo 113-8656, Japan

• ITOH Kohei

  School of Fundamental Science and Technology and CREST-JST, Keio University

• Itoh Kohei

  School of Fundamental Science and Technology, Keio University, Yokohama 223-8522, Japan

• Hirano Rii

  Institute of Space and Astronautical Science/JAXA, Sagamihara 252-5210, Japan

• Tajima Michio

  Institute of Space and Astronautical Science/JAXA, Sagamihara 252-5210, Japan

• Tsuchida Hidekazu

  Central Research Institute of Electric Power Industry, Yokosuka, Kanagawa 240-0196, Japan

• MAEDA Koji

  Department of Agricultural Chemistry, University of Osaka Prefecture

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