Photoluminescence Mapping System Applicable to 300 mm Silicon-on-Insulator Wafers : Instrumentation, Measurement, and Fabrication Technology
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 2002-12-15
著者
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TAJIMA Michio
Institute of Space and Astronautical Science/JAXA
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Tajima Michio
Institute Of Space And Astronautical Science
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Tajima Michio
Institute Of Space And Astronautical Scienc
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LI Zhiqiang
Institute of Physics, Chinese Academy of Sciences
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Li Zhiqiang
Institute Of Physics Chinese Academy Of Sciences
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SHIMIDZU Ryosuke
Photon Design Co., Ltd.
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Shimidzu Ryosuke
Photon Design Co. Ltd.
関連論文
- Fine Structure Due to Donor-Acceptor Pair Luminescence in Compensated Si
- Photoluminescence Due to Degenerate Electron-Hole System in Silicon-on-Insulator Wafers under Ultraviolet Light Excitation
- Deep-Level Luminescence in Czochralski-Grown Silicon Crystals after Long-Term Annealing at 450℃
- Photoquenching and Recovery Effects of EL2 Absorption in GaAs : Optical Properties of Condensed Matter
- Above Band-Gap Excitation Process of the 0.6 eV Luminescence Band in GaAs
- Influence of AlN Buffer on Phase Structure of GaN on GaAs(001)Grown by Radio-Frequency Molecular Beam Epitaxy
- Characterization of HF-Treated Si Surfaces by Photoluminescence Spectroscopy
- Characterization of Silicon-on-Insulator Wafers by Photoluminescence Decay Lifetime Measurement
- Photoluminescence Mapping System Applicable to 300 mm Silicon-on-Insulator Wafers : Instrumentation, Measurement, and Fabrication Technology
- Characterization of Interface in GaAs Epitaxial Wafer by Spatially Resolved Photoluminescence from Cleaved Face
- Correlation between Photoluminescence Lifetime and Interface Trap Density in Silicon-on-Insulator Wafers
- Photoluminescence Analysis of {311} Interstitial Defects in Wafers Synthesized by Separation by Implanted Oxygen : Structure and Mechanical and Thermal Properties of Condensed Matter
- Mapping of Vanadium-Related Luminescence on SiC Wafer at Room Temperature
- Spectral Shape Analysis of Photoluminescence Excitation in Semiconductors
- Direct Observation of Growth Striations in a Liquid Encapusulated Czochralski GaP Crystal by Light Scattering Method
- UV-Raman Spectroscopy System for Local and Global Strain Measurement in Si
- Photoluminescence of Si_Ge_x/Si Quantum Well Structures
- Photoluminescence of Low-Energy B^+-Implanted Silicon under Ultraviolet Light Excitation
- Photoluminescence of Low-Energy B± Implanted Silicon under Ultraviolet Light Excitation
- Defect Analysis in Bonded and H^+ Split Silicon-on-Insulator Wafers by Photoluminescence Spectroscopy and Transmission Electron Microscopy
- Characterization of Light Element Impurities in Ultrathin Silicon-on-Insulator Layers by Luminescence Activation Using Electron Irradiation
- Characterization of Nonuniformity of 6H-SiC Wafers by Photoluminescence Mapping at Room Temperature
- Photoluminescence Due to Degenerate Electron-Hole System in Silicon-on-Insulator Wafers under Ultraviolet Light Excitation
- Nondestructive Analysis of Propagation of Stacking Faults in SiC Bulk Substrate and Epitaxial Layer by Photoluminescence Mapping
- Influences of grassland degradation on forage availability by sheep in the Inner Mongolian steppes of China
- Photoluminescence Study of Radiation-Enhanced Dislocation Glide in 4H-SiC
- Polarization of Photoluminescence from Partial Dislocations in 4H-SiC
- Analysis of Intra-Grain Defects in Multicrystalline Silicon Wafers by Photoluminescence Mapping and Spectroscopy
- Photoluminescence Analysis of Proton Irradiation Effects in Cu(In,Ga)Se2 Solar Cells
- Photoluminescence Study of Radiation-Enhanced Dislocation Glide in 4H-SiC
- Comparison of Silicon-on-Insulator Wafer Mappings between Photoluminescence Intensity and Microwave Photoconductivity Decay Lifetime
- Photoluminescence Imaging of Multicrystalline Si Wafers during HF Etching
- UV-Raman Spectroscopy System for Local and Global Strain Measurements in Si
- The Performance of the Lithium-Ion Secondary Cells under Micro-Gravity Conditions—In-Orbit Operation of the Interplanetary Spacecraft 'HAYABUSA'
- Correlation between Photoluminescence Lifetime and Interface Trap Density in Silicon-on-Insulator Wafers
- Oxygen Precipitates and Related Defects in SOI Substrate Fabricated by Wafer Bonding and H^+ Splitting