Influence of AlN Buffer on Phase Structure of GaN on GaAs(001)Grown by Radio-Frequency Molecular Beam Epitaxy
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 2000-08-15
著者
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Yang Ning
Laboratory Of Advanced Materials Tsinghua University
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CHEN Hong
Institute of Physics, Chinese Academy of Sciences
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Huang Qi
Institute Of Physics Chinese Academy Of Sciences
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Wan Li
Institute Of Physics Chinese Academy Of Sciences
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LI Zhiqiang
Institute of Physics, Chinese Academy of Sciences
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LIU Hongfei
Institute of Physics, Chinese Academy of Sciences
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ZHANG Manhong
Institute of Physics, Chinese Academy of Sciences
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ZHOU Junming
Institute of Physics, Chinese Academy of Sciences
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TAO Kun
Laboratory of Advanced Materials, Tsinghua University
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Tao Kun
Laboratory Of Advanced Materials Tsinghua University
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Liu H
Institute Of Physics Chinese Academy Of Sciences
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Li Zhiqiang
Institute Of Physics Chinese Academy Of Sciences
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Zhou Junming
Institute Of Physics Chinese Academy Of Sciences
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Zhang Manhong
Institute Of Physics Chinese Academy Of Sciences
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Liu Hongfei
Institute Of Physics Chinese Academy Of Sciences
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Zhang Minjuan
Department Of Physical Electronics Tokyo Institute Of Technology
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Chen Hong
Institute Of Industrial Science University Of Tokyo
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Chen Hong
Institute Of Physics Chinese Academy Of Sciences
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Li Zhiqiang
Institute Of Grassland Science China Agricultural University
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Liu Hongfei
Institute of Materials Research and Engineering, A*STAR (Agency of Science, Technology and Research), 3 Research Link, Singapore 117602
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