Takahashi T | Japan Advanced Institute Of Science And Technology
スポンサーリンク
概要
関連著者
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Kawado Seiji
Environment & Analysis Technology Department Technical Support Center Sony Corporation
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Kikuta Seishi
Department Of Applied Physics Faculty Of Engineering The University Of Tokyo
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Kikuta Seishi
Institute For Solid State Physics University Of Tokyo
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KIKUTA Seishi
Department of Applied Physics, Faculty of Engineering, University of Tokyo
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TAKAHASHI Toshio
Institute for Solid State Physics, University of Tokyo
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NAKATANI Shinichiro
Institute for Solid State Physics, University of Tokyo
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Furue Hirokazu
Yokoyama Nano-structared Liquid Crystal Project Japan Science And Technology Corporation
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Furue Hirokazu
Liquid Crystal Institute And Graduate School Of Engineering Science Science University Of Tokyo In Y
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Ishikawa T
Riken Harima Institute
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ISHIKAWA Tetsuya
Photon Factory, National Laboratory for High Energy Physics
著作論文
- Control by Ammonium Ion of the Change from Step-Up to Step-Down Photophobically Responding Cells in the Flagellate Alga Euglena gracilis
- Syntheses and Properties of Oligothiophenes with Cyano and Hexyl Groups
- Study on the Si(111) √×√ - Ag Surface Structure by X-Ray Diffraction : Surfaces, Interfaces and Films
- Characterization of amorphous-Si/1ML-Ge/Si(001) Interface Structure by X-ray Standing Waves
- High Sensitive Imaging of Atomic Arrangement of Ge Clusters Buried in a Si Crystal by X-ray Fluorescence Holography
- Position Determination by Laser Marks of Biological Samples Placed on a Plastic Track Detector and Inactivation of B. subtilis Spores by a Single Heavy Ion
- Time-Resolved X-Ray Diffraction from a Silicon Crystal Irradiated by a Q-Switched Nd:YAG Laser : Condensed Matter
- X-Ray Standing Wave Method Applied to the Characterization of InGaAsP Alloy Semiconductor Thin Film
- Observation of X-Ray Diffraction Spots from the (√×√)R30°Bi Structure on the Si(111) Surface under the Condition of Large Incidence Angle
- Structure Analysis of the NiSi_2/(111)Si Interface by the X-Ray Standing Wave Method