Characterization of amorphous-Si/1ML-Ge/Si(001) Interface Structure by X-ray Standing Waves

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概要

• 論文の詳細を見る
• 2003-11-15

著者

• TAKAHASHI Toshio

  Institute for Solid State Physics, University of Tokyo

• NAKATANI Shinichiro

  Institute for Solid State Physics, University of Tokyo

• HIRANO Keiichi

  Institute of Material Structure Science, KEK-PF, High Energy Accelerator Research Organization

• KOH Shinji

  Department of Applied Physics, The University of Tokyo

• SHIRAKI Yasuhiro

  Department of Applied Physics, The University of Tokyo

• SUMITANI Kazushi

  Institute for Solid State Physics, The University of Tokyo

• NOJIMA Akinobu

  Institute for Solid State Physics, The University of Tokyo

• IRISAWA Toshifumi

  Department of Applied Physics, School of Engineering, The University of Tokyo

• Irisawa Toshifumi

  Department Of Applied Physics School Of Engineering The University Of Tokyo

• Sumitani Kazushi

  Institute For Solid State Physics The University Of Tokyo

• Takahashi Tetsuo

  National Institute Of Advanced Industrial Science And Technology Power Electronics Research Center

• Takahashi T

  Nihon Univ. Kanagawa

• Takahashi T

  Japan Advanced Institute Of Science And Technology

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