Optical Properties of Strain-Balanced Si_<0.73>Ge_<0.27> Planar Microcavities on Si Substrates

スポンサーリンク

概要

• 論文の詳細を見る
• 2002-04-30

著者

• KAWAGUCHI Kenichi

  Department of Anatomic Pathology (Second Department of Pathology), Pathological Sciences, Kyushu Uni

• SHIRAKI Yasuhiro

  Department of Applied Physics, The University of Tokyo

• Zhang Jing

  Central Lab. Beijing Center For Disease Prevention And Control

• Koh Shinji

  Department Of Applied Physics The University Of Tokyo

• Kaneko Yasuhisa

  Agilent Laboratories

• Shiraki Yasuhiro

  Department Of Applied Physics And Physico-informatics Keio University

• Shiraki Yasuhiro

  Department Of Applied Physics The University Of Tokyo

• Kawaguchi Kenichi

  Department Of Applied Physics The University Of Tokyo

• KONISHI Kuniaki

  Department of Applied Physics, The University of Tokyo

• Konishi Kuniaki

  Department Of Applied Physics The University Of Tokyo

• Zhang Jing

  Centre For Electronic Materials And Devices Imperial College Of Science Technology And Medicine Blac

関連論文

• Alterations of the p16^/p14^ pathway in clear cell sarcoma
• Magneto-photoluminescence Studies of AlInAs/AlGaAs Self-assembled Quantum Dots with Type-II Band Alignment (Condensed Matter: Electronic Structure, Electrical, Magnetic and Optical Properties)
• Observation of Band Alignment Transition from Type-I to Type-II in AlInAs/AlGaAs Self-assembled Quantum Dots
• Characterization of amorphous-Si/1ML-Ge/Si(001) Interface Structure by X-ray Standing Waves
• Enhancement of Strain Relaxation of SiGe Thin Layers by Pre-Ion-Implantation into Si Substrates
• Three-Dimensional Reconstruction of Atoms in Surface X-Ray Diffraction
• Optical Properties of Strain-Balanced Si_Ge_ Planar Microcavities on Si Substrates
• Sublattice Reversal in GaAs/Si/GaAs (100) Heterostructures by Molecular Beam Epitaxy
• High Sensitive Imaging of Atomic Arrangement of Ge Clusters Buried in a Si Crystal by X-ray Fluorescence Holography
• GaAsP Layers Grown on (111)-Oriented GaAs Substrates by Metalorganic Vapor Phase Epitaxy
• Structural Disorder and Optical Property of InGaAsN Alloy Semiconductor (小特集テーマ 進展する窒化物半導体光・電子デバイスの現状,及び一般)
• Structural Disorder and Optical Property of InGaAsN Alloy Semiconductor (小特集テーマ:進展する窒化物半導体光・電子デバイスの現状,及び一般)
• GaAs/Ge/GaAs Sublattice Reversal Epitaxy on GaAs (100) and (111) Substrates for Nonlinear Optical Devices
• Critical Displacement of Host-Atoms for Amorphization in Germanium Induced by Arsenic Implantation
• Observation of Pronounced Effect of Compressive Strain on Room-Temperature Transport Properties of Two-Dimensional Hole Gas in a Strained Ge Quantum Well
• Room-temperature Transport Properties of High Drift Mobility Two-dimensional Electron Gas Confined in a Strained Si Quantum Well
• Quantitative Evaluation of Silicon Displacement Induced by Arsenic Implantation Using Silicon Isotope Superlattices
• Demonstration of holes in strained Ge quantum wells with much higher drift mobility and density than that of electrons in strained Si channels
• Observation of Band Alignment Transition from Type-I to Type-II in AlInAs/AlGaAs Self-assembled Quantum Dots(Condensed Matter : Electronic Structure, Electrical, Magnetic and Optical Properties)
• High-Performance Liquid-Chromatographic Separation of Ofloxacin Using a Chiral Stationary Phase
• The Γ_c-Γ_v Transition Energies of Al_xIn_P Alloys
• Determination of the residues of 50 anabolic hormones in muscle, milk and liver by very-high-pressure liquid chromatography-electrospray ionization tandem mass spectrometry
• Analysis of eight free progestogens in eggs by matrix solid-phase dispersion extraction and very high pressure liquid chromatography with tandem mass spectrometry
• Simultaneous detection of residues of β-adrenergic receptor blockers and sedatives in animal tissues by high-performance liquid chromatography/tandem mass spectrometry
• Pressurized Liquid Extraction and Cleanup Procedure for the Determination of Pyrethroids in Soils Using Gas Chromatography/Tandem Mass Spectrometry
• Characterization of amorphous-Si/1ML-Ge/Si(001) Interface Structure by X-ray Standing Waves
• Three-Dimensional Reconstruction of Atoms in Surface X-Ray Diffraction
• Study on Sublattice Reversal in a GaAs/Ge/GaAs(001) Crystal by X-ray Standing Waves
• High Sensitive Imaging of Atomic Arrangement of Ge Clusters Buried in a Si Crystal by X-ray Fluorescence Holography

もっと見る 閉じる

スポンサーリンク