Demonstration of holes in strained Ge quantum wells with much higher drift mobility and density than that of electrons in strained Si channels

スポンサーリンク

概要

論文の詳細を見る
2007-09-19

著者

関連論文

Multiband Superconductivity in Heavy Fermion Compound CePt_3Si without Inversion Symmetry : An NMR Study on a High-Quality Single Crystal(Condensed matter: electronic structure and electrical, magnetic, and optical properties)
Comparison of Nonlocal and Local Magnetoresistance Signals in Laterally Fabricated Fe_3Si/Si Spin-Valve Devices
Strain Relaxation and Induced Defects in SiGe Thin Films Grown on Ion-Implanted Si Substrates
Magneto-photoluminescence Studies of AlInAs/AlGaAs Self-assembled Quantum Dots with Type-II Band Alignment (Condensed Matter: Electronic Structure, Electrical, Magnetic and Optical Properties)
Observation of Band Alignment Transition from Type-I to Type-II in AlInAs/AlGaAs Self-assembled Quantum Dots
Enhancement of Strain Relaxation of SiGe Thin Layers by Pre-Ion-Implantation into Si Substrates
Three-Dimensional Reconstruction of Atoms in Surface X-Ray Diffraction
A Novel Triple δ-Doped SiGe Heterostructure Field-Effect Transistor
Optical Properties of Strain-Balanced Si_Ge_ Planar Microcavities on Si Substrates
Fabrication of Periodically Domain-Inverted AlGaAs Quasi-Phase-Matched Devices by GaAs/Ge/GaAs Sublattice Reversal Epitaxy
Growth Mechanism in the Metalorganic Vapor Phase Epitaxy of Metastable GaP_N_x Alloys: A Growth Interruption Study
Arsenic Surfactant and Incorporation Effects on Cubic GaN Grown by Metalorganic Vapor Phase Epitaxy
Metalorganic Vapor Phase Epitaxy Growth of High Quality Cubic GaN on GaAs (100) Substrates
High Quality Cubic GaN Growth on GaAs (100) Substrates by Metalorganic Vapor Phase Epitaxy
High Purity Isotopically Enriched ^Si and ^Si Single Crystals : Isotope Separation, Purification, and Growth
Second-Harmonic Generation from GaP/AlP Multilayers on GaP(111)Substrates Based on Quasi-Phase Matching for the Fundamental Standing Wave
Effect of Si/SiO_2 Interface on Silicon and Boron Diffusion in Thermally Grown SiO_2
Complete Scaling Analysis of the Metal-Insulator Transition in Ge:Ga: Effects of Doping-Compensation and Magnetic Field(Condensed Matter : Electronic Structure, Electrical, Magnetic and Optical Properties)
Complete Scaling Analysis of the Metal-Insulator Transition in Ge:Ga : Effects of Doping-Compensation and Magnetic Field
High-Temperature Metalorganic Vapor Phase Epitaxial Growth of GaAs/AlGaAs Quantum Structures in Tetrahedral-Shaped Recesses on GaAs (111) B Substrates
Polarization Characteristics of Crescent-Shaped Tensile-Strained GaAsP/AlGaAs Quantum Wire-Like Lasers
GaAs/AlGaAs Quantum Structures Grown in Tetrahedral-Shaped Recesses on GaAs (111)B Substrates by Metalorganic Vapor Phase Epitaxy
Polarization Characteristics of Crescent-Shaped Tensile-Strained GaAsP/AlGaAs Quantum Wire Lasers
GaAs/AlGaAs Quantum Structures Grown in Tetrahedral-Shaped Recesses on GaAs (111)B Substrates by MOVPE
GaAsP Layers Grown on (111)-Oriented GaAs Substrates by Metalorganic Vapor Phase Epitaxy
Introduction of Uniaxial Strain into Si/Ge Heterostructures by Selective Ion Implantation
Development of Thin SiGe Relaxed Layers with High-Ge Composition by Ion Implantation Method and Application to Strained Ge Channels
On Effects of Gate Bias on Hole Effective Mass and Mobility in Strained-Ge Channel Structures
Strain-Field Evaluation of Strain-Relaxed Thin SiGe Layers Fabricated by Ion Implantation Method
Structural Disorder and Optical Property of InGaAsN Alloy Semiconductor (小特集テーマ進展する窒化物半導体光・電子デバイスの現状,及び一般)
Structural Disorder and Optical Property of InGaAsN Alloy Semiconductor (小特集テーマ:進展する窒化物半導体光・電子デバイスの現状,及び一般)
The Effect of Partial Pressure of Oxygen on Self-Diffusion of Si in SiO_2
Device Linear Improvement Using SiGe/Si Heterostructure Delta-Doped-Channel Field-Effect Transistors
Critical Displacement of Host-Atoms for Amorphization in Germanium Induced by Arsenic Implantation
Observation of Pronounced Effect of Compressive Strain on Room-Temperature Transport Properties of Two-Dimensional Hole Gas in a Strained Ge Quantum Well
Room-temperature Transport Properties of High Drift Mobility Two-dimensional Electron Gas Confined in a Strained Si Quantum Well
Quantitative Evaluation of Silicon Displacement Induced by Arsenic Implantation Using Silicon Isotope Superlattices
Demonstration of holes in strained Ge quantum wells with much higher drift mobility and density than that of electrons in strained Si channels
Strain Relaxation and Surface Morphology of Ultrathin High Ge Content SiGe Buffers Grown on Si(001) Substrate
Mobility Enhancement in Strained Ge Heterostructures by Planarization of SiGe Buffer Layers Grown on Si Substrates
Observation of Band Alignment Transition from Type-I to Type-II in AlInAs/AlGaAs Self-assembled Quantum Dots(Condensed Matter : Electronic Structure, Electrical, Magnetic and Optical Properties)
Temperature Dependence of Excitonic $\Gamma_{\text{c}}$–$\Gamma_{\text{v}}$ Transition Energies of GaxIn1-xP Crystals
The Γ_c-Γ_v Transition Energies of Al_xIn_P Alloys
Modified Luminescence from Germanium Self-assembled Quantum Dots in Photonic Crystal Cavity at Room Temperature
Formation of Tensilely Strained Germanium-on-Insulator
Characterization of amorphous-Si/1ML-Ge/Si(001) Interface Structure by X-ray Standing Waves
Three-Dimensional Reconstruction of Atoms in Surface X-Ray Diffraction
High Sensitive Imaging of Atomic Arrangement of Ge Clusters Buried in a Si Crystal by X-ray Fluorescence Holography

もっと見る

スポンサーリンク