Solid State Reaction of Mo on Cubic and Hexagonal SiC
スポンサーリンク
概要
- 論文の詳細を見る
Mo/3C-SiC and Mo/6H-SiC interfaces have been investigated by Auger electron spectroscopy, Rutherford backscattering spectroscopy, X-ray diffraction, and transmission electron microscopy. High temperature annealing at 1200℃ for 1 hour caused a reaction at the interfaces, resulting in forming a Mo_2C/Mo_5Si_3/SiC multilayer. We have found that SiC poly-typism (3C or 6H) and Mo deposition process (evaporation or sputter deposition) make no influence in forming the multilayer. The diffusion mechanism at the Mo/SiC interface will be discussed.
- 社団法人応用物理学会の論文
- 1990-03-20
著者
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OHDOMARI Iwao
School of Science and Engineering, Waseda University
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Ohdomari Iwao
School Of Science And Engineering Waseda University
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Hara S
Advanced Industrial Science And Technology (aist) Power Electronics Research Center:ultra-low-loss P
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Hara Shiro
School Of Science And Engineering Waseda University
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UENO Tomo
School of Science and Engineering, Waseda University
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YOSHIDA Sadafumi
Electrotechnical Laboratory
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SAKUMA Eiichiro
Electrotechnical Laboratory
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MISAWA Shunji
Electrotechnical Laboratory
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Ueno Tomo
School Of Science And Engineering Waseda University
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Yoshida S
The Second Department Of Internal Medicine Chiba University School Of Medicine
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Furuya Akira
School Of Science And Engineering Waseda University
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Misawa S
Tsukuba Institute For Super Materials Ulvac Japan Ltd.
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SUZUKI Kiyohisa
School of Science and Engineering, Waseda University
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MATSUI Youichi
School of Science and Engineering, Waseda University
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UEDA Yoshiya
Advanced Materials Laboratory, Inc.
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SUZUKI Setsu
Advanced Materials Laboratory, Inc.
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Suzuki Setsu
Advanced Materials Laboratory Inc.
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Ueda Yoshiya
Advanced Materials Laboratory Inc.
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Matsui Youichi
School Of Science And Engineering Waseda University
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Yoshida S
Sharp Corp. Nara Jpn
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Suzuki Kiyohisa
School Of Science And Engineering Waseda University
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