Kinetic Behavior of Al Growth on the Si(100) Surface Studied by Scanning Tunneling Microscopy
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概要
- 論文の詳細を見る
- 1995-09-20
著者
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Tsukahara Sonoko
Tsukuba Institute For Super Materials Ulvac Japan Ltd.
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Misawa S
Tsukuba Institute For Super Materials Ulvac Japan Ltd.
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Fujiwara Shiro
Ulvac Corporation
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Tsukahara S
Tsukuba Institute For Super Materials Ulvac Japan Ltd.
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ZHU Changxin
Tsukuba Institute for Super Materials, ULVAC JAPAN, Ltd.
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MISAWA Shunji
Tsukuba Institute for Super Materials, ULVAC JAPAN, Ltd.
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Zhu Changxin
Tsukuba Institute For Super Materials Ulvac Japan Ltd.
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Tsukahara Sonoko
Tsukuba Institute For Super Materials Ulvac Japan Ltd
関連論文
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- Observation of Direct Band Gap Properties in Ge_nSi_m Strained-Layer Superlattices
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- Solid State Reaction of Mo on Cubic and Hexagonal SiC
- Ray Tracing in a Distributed-Index Planar Micro-Lens
- Kinetic Behavior of Al Growth on the Si(100) Surface Studied by Scanning Tunneling Microscopy
- Observation of Initial Growth of In on Silicon(100) Surface
- Determination of Evaporation Rate and Vapor Pressure of Organic Monomers Used for Vapor Deposition Polymerization
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- Summary Abstract