TiC Single Crystal Preparation by Floating Zone Technique under Low Ambient Gas Pressure

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関連論文

Growth of High-Mobility 3C-SiC Epilayers by Chemical Vapor Deposition : Semiconductors and Semiconductor Devices
Photoluminescence of Unintentionally Doped and N-Doped 3C-SiC Grown by Chemical Vapor Deposition : Semiconductors and Semiconductor Devices
Temperature Dependence of Electrical Properties of Nitrogen-Doped 3C-Sit
High-Temperature Operation of Silicon Carbide MOSFET
Annealing Effects on Al and AN-Si Contacts with 3C-SiC
Preparation of As-Deposited Bi-Sr-Ca-Cu-O Films with High T_c Superconducting Phase by Metalorganic Chemical Vapor Deposition
The Origin of Residual Carriers in CVD-Grown 3C-SiC : Semiconductors and Semiconductor Devices
Effects of Electron Irradiation on Two-Dimensional Electron Gas in AlGaAs/GaAs Heterostructure
C-V Characteristics of MOS Structures Fabricated of Al-Doped p-Type 3C-SiC Epilayers Grown on Si by Chemical Vapor Deposition
Observation of Direct Band Gap Properties in Ge_nSi_m Strained-Layer Superlattices
Influence of Gallium Sources on Impurity Doping in Gas Source MBE GaAs
Solid State Reaction of Mo on Cubic and Hexagonal SiC
Some Aspects of ESCA Spectra of Single Crystals and Thin Films of Titanium Carbide
TiC Single Crystal Preparation by Floating Zone Technique under Low Ambient Gas Pressure
Photoelectrochemical behavior of p-Type boron phosphide photoelectrode in acidic solution.

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