Fabrication and Electrical Properties of Thermally Oxidized p-Channel Metal--Oxide--Semiconductor Field-Effect Transistors on 4H-SiC C-Face

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概要

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• We characterized the SiO2/SiC interface by capacitance--voltage (C--V) measurement in order to obtain p-channel metal--oxide--semiconductor field-effect transistors (MOSFETs) on the 4H-SiC(000\bar{1}) C-face. Wet gate oxidation was preferable for both n- and p-type MOS capacitors, but p-type MOS interface properties were inferior to those of n-type MOS capacitors. The cause of the large flat-band shift for the p-type sample was discussed on the basis of C--V measurements by the light illumination technique. We also investigated the influence of the high-temperature annealing process after gate oxidation on the MOS interface properties. The p-type MOS interface was more sensitive to the annealing process than the n-type MOS interface. We fabricated 4H-SiC C-face p-channel MOSFETs by wet gate oxidation and low-temperature postdeposition annealing in He--H2 ambient. The normal FET operation was accomplished on the 4H-SiC C-face for the first time. Those devices, however, indicated low channel mobility and large threshold voltage.

• 2012-04-25

著者

• OKUMURA Hajime

  Advanced Industrial Science and Technology (AIST), Power Electronics Research Center

• Iijima Miwako

  Advanced Power Electronics Research Center National Institute Of Advanced Industrial Science And Technology

• Okamoto Mitsuo

  Advanced Power Electronics Research Center (ADPERC), National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8568, Japan

• Okumura Hajime

  Advanced Power Electronics Research Center (ADPERC), National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8568, Japan

• Fukuda Kenji

  Advanced Power Electronics Research Center (ADPERC), National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8568, Japan

関連論文

• Improvement of DC Characteristics in AlGaN/GaN Heterojunction Field-Effect Transistors Employing AlN Spacer Layer
• Gate-Length Dependence of DC Characteristics in Submicron-Gate AlGaN/GaN High Electron Mobility Transistors
• Characteristics of 4H-SiC n- and p-Channel Metal-Oxide-Semiconductor Field-Effect Transistors with Ion-Implanted Buried Channel (Special Issue : Solid State Devices and Materials (1))
• Fabrication and Electrical Properties of Thermally Oxidized p-Channel Metal--Oxide--Semiconductor Field-Effect Transistors on 4H-SiC C-Face
• Coexistence of Small Threshold Voltage Instability and High Channel Mobility in 4H-SiC(0001) Metal-Oxide-Semiconductor Field-Effect Transistors
• Suppression of Al Memory-Effect on Growing 4H-SiC Epilayers by Hot-Wall Chemical Vapor Deposition

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