Iijima Miwako | Advanced Power Electronics Research Center National Institute Of Advanced Industrial Science And Technology
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概要
- 同名の論文著者
- Advanced Power Electronics Research Center National Institute Of Advanced Industrial Science And Technologyの論文著者
関連著者
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OKUMURA Hajime
Advanced Industrial Science and Technology (AIST), Power Electronics Research Center
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Iijima Miwako
Advanced Power Electronics Research Center National Institute Of Advanced Industrial Science And Technology
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Okamoto Mitsuo
Advanced Power Electronics Research Center (ADPERC), National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8568, Japan
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Fukuda Kenji
Advanced Power Electronics Research Center (ADPERC), National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8568, Japan
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Iwamuro Noriyuki
Advanced Device Technology Laboratory Fuji Electric Corporation Research & Development Ltd.
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Kimura Hiroshi
Fuji Electric Co. Ltd.
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Fukuda Kenji
Advanced Power Electronics Research Center National Institute Of Advanced Industrial Science And Technology
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OKAMOTO Mitsuo
Advanced Power Electronics Research Center, National Institute of Advanced Industrial Science and Technology
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MAKIFUCHI Youichi
Advanced Power Electronics Research Center, National Institute of Advanced Industrial Science and Technology
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SAKAI Yoshiyuki
Advanced Power Electronics Research Center, National Institute of Advanced Industrial Science and Technology
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Makifuchi Youichi
Advanced Power Electronics Research Center National Institute Of Advanced Industrial Science And Technology
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Sakai Yoshiyuki
Advanced Power Electronics Research Center National Institute Of Advanced Industrial Science And Technology
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Okumura Hajime
Advanced Power Electronics Research Center (ADPERC), National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8568, Japan
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Nagano Takahiro
Advanced Power Electronics Research Center (ADPERC), National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8568, Japan
著作論文
- Characteristics of 4H-SiC n- and p-Channel Metal-Oxide-Semiconductor Field-Effect Transistors with Ion-Implanted Buried Channel (Special Issue : Solid State Devices and Materials (1))
- Fabrication and Electrical Properties of Thermally Oxidized p-Channel Metal--Oxide--Semiconductor Field-Effect Transistors on 4H-SiC C-Face
- Coexistence of Small Threshold Voltage Instability and High Channel Mobility in 4H-SiC(0001) Metal-Oxide-Semiconductor Field-Effect Transistors