Aksenov Igor | Joint Research Center For Atom Technology (jrcat)-angstrom Technology Partnership (atp)

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概要

• AKSENOV Igorの詳細を見る
• 同名の論文著者
• Joint Research Center For Atom Technology (jrcat)-angstrom Technology Partnership (atp)の論文著者

関連著者

• Aksenov Igor

  Joint Research Center For Atom Technology (jrcat)-angstrom Technology Partnership (atp)

• Aksenov Igor

  Joint Research Center For Atom Technology

• OKUMURA Hajime

  Electrotechnical Laboratory (ETL)

• Okumura H

  National Institute Of Advanced Industrial Science And Technology Power Electronics Research Center

• Okumura H

  Electrotechnical Lab. Ibaraki Jpn

• Okumura Hajime

  Nakano Central Research Institute Nakano Vinegar Co. Ltd.

• Okumura Hajime

  Electrotechnical Laboratory

• Nakada Yoshinobu

  Central Research Institute Mitsubishi Materials Corporation

• Okunuma H

  National Institute Of Advanced Industrial Science And Technology

• SATO Katsuaki

  Faculty of Technology, Tokyo University of Agriculture and Technology

• Sato Katsuaki

  Faculty Of Technology Tokyo University Of Agriculture & Techonology

• Raptis Y

  National Technical Univ. Athens Athens Grc

• URSAKI Veacheslav

  Institute of Applied Physics, Academy of Sciences of Moldova

• BURLAKOV Igor

  Institute of Applied Physics, Academy of Sciences of Moldova

• TIGINYANU Ivan

  Institute of Applied Physics, Academy of Sciences of Moldova

• RAPTIS Yannis

  Physics Department, National Technical University

• ANASTASSAKIS Evangelos

  Physics Department, National Technical University

• Raptis Yannis

  Physics Department National Technical University

• Tiginyanu Ivan

  Institute Of Applied Physics Academy Of Sciences Of Moldova

• Anastassakis Evangelos

  Physics Department National Technical University

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著作論文

• Pressure Induced Phase Transitions in Spinel and Wurtzite Phases of ZnAl_2S_4 Compound
• Nitridation of Gaps (001) Surface Studied by Auger Electron Spectroscopy
• Nitridation of GaAs(001) Surface Studied by Auger Electron Spectroscopy
• Energy Shifts of Auger Transitions of Ga, As and N during Plasma-assisted Nitridation of GaAs (001) Surface

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