Shinohara M | Shimadzu Corporation

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概要

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著作論文

Dislocation Propagation into MBE Grown GaAs Layers under the Condition of Misfit Dislocation Generation
Misfit Dislocation Generation for MBE Grown GaAs on In-Doped LEC-GaAs Substrates
Origin of Surface Defects on Molecular Beam Epitaxially Grown GaAs
Electrical Properties of Oval Defects in GaAs Grown by MBE
Growth of High-Mobility 3C-SiC Epilayers by Chemical Vapor Deposition : Semiconductors and Semiconductor Devices
Photoluminescence of Unintentionally Doped and N-Doped 3C-SiC Grown by Chemical Vapor Deposition : Semiconductors and Semiconductor Devices
The Origin of Residual Carriers in CVD-Grown 3C-SiC : Semiconductors and Semiconductor Devices
Computer Simulation for Analysis of Lattice Polarity of Wurtzite GaN{0001} Film by Coaxial Impact Collision Ion Scattering Spectroscopy
Terminating Structure of Plasma-Assisted Molecular Beam Epitaxial GaN{0001} Film Surface Identified by Coaxial Impact Collision Ion Scattering Spectroscopy
Identification of Surface Atoms of LiGaO_2(001) Substrate for Hexagonal GaN Film by Coaxial Impact Collision Ion Scattering Spectroscopy
Fabrication of Rectangular Holes along 2×4 Unit Cells on GaAs(001) Reconstructed Surface with a Scanning Tunneling Microscope
Growth Processes of GaAs Grown by Atomic Layer Epitaxy Revealed by Atomic Force Microscopy
Scanning Tunneling Microscopy of (NH_4)_2S_x-Treated GaAs Surfaces Annealed in Vacuum
Coaxial Impact Collision Ion Scattering Spectroscopy Measurements of As/Si(100) Structure Prepared by Ionized Cluster Beam Method
C-V Characteristics of MOS Structures Fabricated of Al-Doped p-Type 3C-SiC Epilayers Grown on Si by Chemical Vapor Deposition

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