Electrical Properties of Oval Defects in GaAs Grown by MBE
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1984-06-20
著者
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Ito Tomonori
Ntt Atsugi Electrical Communication Laboratories
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Shinohara Masanori
NTT Atsugi Electrical Communication Laboratories
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Imamura Yoshihiro
NTT Atsugi Electrical Communication Laboratories
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ITO Tomonori
Atsugi Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation
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SHINOHARA Masanori
Atsugi Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation
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IMAMURA Yoshihiro
Atsugi Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation
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WADA Kazumi
Atsugi Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation
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Imamura Yoshihiro
Atsugi Electrical Communication Laboratories Nippon Telegraph And Telephone Public Corp.
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Imamura Yoshihiro
Atsugi Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation
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Shinohara M
Shimadzu Corporation
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Imamura Y
Yamanashi Univ. Kofu Jpn
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Shinohara M
Surface Analysis And Semiconductor Equipment Department Shimadzu Corporation
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Wada Kazumi
Atsugi Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation
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