Imamura Yoshihiro | Atsugi Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation

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概要

• 同名の論文著者
• Atsugi Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporationの論文著者

関連著者

• Imamura Yoshihiro

  NTT Atsugi Electrical Communication Laboratories

• Imamura Yoshihiro

  Atsugi Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation

• Ito Tomonori

  Ntt Atsugi Electrical Communication Laboratories

• Shinohara Masanori

  NTT Atsugi Electrical Communication Laboratories

• Shinohara M

  Shimadzu Corporation

• Imamura Y

  Yamanashi Univ. Kofu Jpn

• Shinohara M

  Surface Analysis And Semiconductor Equipment Department Shimadzu Corporation

• IMAMURA Yoshihiro

  Atsugi Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation

• Imamura Yoshihiro

  Atsugi Electrical Communication Laboratories Nippon Telegraph And Telephone Public Corp.

• Yamada Kazushi

  Department Of Polymer Science And Engineering Kyoto Institute Of Technology

• Yamada Kohji

  NTT Atsugi Electrical Communication Laboratories

• ITO Tomonori

  Atsugi Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation

• SHINOHARA Masanori

  Atsugi Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation

• Yamada Keiichi

  Department Of Electrical Engineering Hiroshima University

• Oe Kunishige

  Atsugi Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation

• WADA Kazumi

  Atsugi Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation

• Wada Kazumi

  Atsugi Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation

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著作論文

• Dislocation Propagation into MBE Grown GaAs Layers under the Condition of Misfit Dislocation Generation
• Misfit Dislocation Generation for MBE Grown GaAs on In-Doped LEC-GaAs Substrates
• Origin of Surface Defects on Molecular Beam Epitaxially Grown GaAs
• Electrical Properties of Oval Defects in GaAs Grown by MBE
• Two-Dimensional Electron Gas at n-AlGaAs/GaAs Interface Grown by Molecular-Beam Epitaxy Using Direct-Radiation Substrate Heating

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