Oe Kunishige | Atsugi Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation
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概要
- 同名の論文著者
- Atsugi Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporationの論文著者
関連著者
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Oe Kunishige
Atsugi Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation
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Hirano M
Jst‐erato Kawasaki Jpn
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Hirano M
Department Of Electrical And Computer Engineering Nagoya Institute Of Technology
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Hirano Makoto
Atsugi Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation
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Hirano Makoto
Ntt Electrical Communications Laboratories
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YANAGAWA Fumihiko
NTT Electrical Communications Laboratories
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Hirano M
National Inst. Infectious Diseases Tokyo Jpn
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Yanagawa F
Ntt Electrical Communications Lab. Atsugi‐shi Jpn
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OE Kunishige
Atsugi Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation
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Imamura Yoshihiro
NTT Atsugi Electrical Communication Laboratories
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IMAMURA Yoshihiro
Atsugi Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation
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ARAI Kunihiro
Atsugi Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation
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YANAGAWA Fumihiko
Atsugi Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation
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HIRANO Makoto
Astugi Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation
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OE Kunishige
Astugi Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation
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YANAGAWA Fumihiko
Astugi Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation
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Imamura Yoshihiro
Atsugi Electrical Communication Laboratories Nippon Telegraph And Telephone Public Corp.
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Imamura Yoshihiro
Atsugi Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation
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Arai Kunihiro
Atsugi Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation
著作論文
- A New p-Channel AlGaAs/GaAs MIS-Like Heterostructure FET Employing Two Dimensional Hole Gas
- p-Channel AlGaAs/GaAs Heterostructure FETs Employing Two-Dimensional Hole Gas
- Two-Dimensional Electron Gas at n-AlGaAs/GaAs Interface Grown by Molecular-Beam Epitaxy Using Direct-Radiation Substrate Heating