p-Channel AlGaAs/GaAs Heterostructure FETs Employing Two-Dimensional Hole Gas
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1984-11-20
著者
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Hirano M
Jst‐erato Kawasaki Jpn
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Hirano M
Department Of Electrical And Computer Engineering Nagoya Institute Of Technology
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Hirano Makoto
Atsugi Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation
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Oe Kunishige
Atsugi Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation
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HIRANO Makoto
Astugi Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation
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OE Kunishige
Astugi Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation
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YANAGAWA Fumihiko
Astugi Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation
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Hirano Makoto
Ntt Electrical Communications Laboratories
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YANAGAWA Fumihiko
NTT Electrical Communications Laboratories
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Hirano M
National Inst. Infectious Diseases Tokyo Jpn
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Yanagawa F
Ntt Electrical Communications Lab. Atsugi‐shi Jpn
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OE Kunishige
Atsugi Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation
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- A New p-Channel AlGaAs/GaAs MIS-Like Heterostructure FET Employing Two Dimensional Hole Gas
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- High Threshold Voltage Reproducibility for WSi/Al_xGa_As/GaAs MIS-Like Heterostructure FET
- Si Diffusion in Compositional Disordering of Si-Implanted GaAs / AlGaAs Superlattices Induced by Rapid Thermal Annealing : Semiconductors and Semiconductor Devices
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