Si Diffusion in Compositional Disordering of Si-Implanted GaAs / AlGaAs Superlattices Induced by Rapid Thermal Annealing : Semiconductors and Semiconductor Devices

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概要

• 論文の詳細を見る

• The Si diffusion in Si-implanted GaAs / Al_<0.5>Ga_<0.5>As superlattices intermixed in the disordering process induced by rapid thermal annealing (RTA), is investigated by means of secondary ion mass spectroscopy (SIMS). The SIMS profiles indicate that no fast Si diffusion occurs during the disordering, and the disordering occurs when the Si concentration exceeds 1×10^<19> cm^<-3>, which is about three times larger than the threshold value for the disordering by furnace annealing (FA). The number of Si atoms which are allowed to pass through the heterointerface is considered to be essential for disordering.

• 社団法人応用物理学会の論文
• 1988-09-20

著者

• YANAGAWA Fumihiko

  NTT Electrical Communications Laboratories

• Uematsu Masashi

  Ntt Electrical Communications Laboratories

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• Electrical Characteristics of Focused-Be-Implanted GaAs Activated by Rapid Thermal Annealing
• High Threshold Voltage Reproducibility for WSi/Al_xGa_As/GaAs MIS-Like Heterostructure FET
• Si Diffusion in Compositional Disordering of Si-Implanted GaAs / AlGaAs Superlattices Induced by Rapid Thermal Annealing : Semiconductors and Semiconductor Devices
• Gas Source Molecular Beam Epitaxy of GaP Using PH_3 Decomposed by Low Energy Electron Impact
• Compositional Disordering of Si-Implanted GaAs/AlGaAs Superlattices by Rapid Thermal Annealing
• Barrier Height in Indirect Bandgap AlGaAs/GaAs Hetero-Junction Determined with n-Semiconductor/Insulator/Semiconductor Diodes

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