YANAGAWA Fumihiko | NTT Electrical Communications Laboratories
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概要
関連著者
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YANAGAWA Fumihiko
NTT Electrical Communications Laboratories
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Hirano M
Jst‐erato Kawasaki Jpn
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Hirano M
Department Of Electrical And Computer Engineering Nagoya Institute Of Technology
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Hirano Makoto
Atsugi Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation
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Hirano Makoto
Ntt Electrical Communications Laboratories
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Hirano M
National Inst. Infectious Diseases Tokyo Jpn
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Yanagawa F
Ntt Electrical Communications Lab. Atsugi‐shi Jpn
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Oe Kunishige
Atsugi Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation
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Uematsu Masashi
Ntt Electrical Communications Laboratories
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OE Kunishige
Atsugi Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation
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Maruo Tetsuya
Ntt Electrical Communications Laboratories
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ARAI Kunihiro
Atsugi Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation
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YANAGAWA Fumihiko
Atsugi Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation
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HIRANO Makoto
Astugi Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation
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OE Kunishige
Astugi Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation
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YANAGAWA Fumihiko
Astugi Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation
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Maezawa Koichi
Ntt Electrical Communications Laboratories
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Arai Kunihiro
Atsugi Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation
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Arai Kunihiro
Ntt Electrical Communications Laboratories
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MIZUTANI Takashi
NTT Electrical Communications Laboratories
著作論文
- A New p-Channel AlGaAs/GaAs MIS-Like Heterostructure FET Employing Two Dimensional Hole Gas
- p-Channel AlGaAs/GaAs Heterostructure FETs Employing Two-Dimensional Hole Gas
- Low-Resistance Ohmic Contacts to p-GaAs
- High Threshold Voltage Reproducibility for WSi/Al_xGa_As/GaAs MIS-Like Heterostructure FET
- Si Diffusion in Compositional Disordering of Si-Implanted GaAs / AlGaAs Superlattices Induced by Rapid Thermal Annealing : Semiconductors and Semiconductor Devices
- Compositional Disordering of Si-Implanted GaAs/AlGaAs Superlattices by Rapid Thermal Annealing
- Barrier Height in Indirect Bandgap AlGaAs/GaAs Hetero-Junction Determined with n-Semiconductor/Insulator/Semiconductor Diodes