High Threshold Voltage Reproducibility for WSi/Al_xGa_<1-x>As/GaAs MIS-Like Heterostructure FET

スポンサーリンク

概要

• 論文の詳細を見る

• A WSi gate Al_xGa_<1-x>As/GaAs MIS-like heterostructure FET was fabricated. The threshold voltage of this FET is independent of the Al_xGa_<1-x>As barrier-layer thickness in contrast with that of an HEMT. There is little variation in the threshold voltage (0.05 V) against a large change in the barrier-layer thickness. This ensures a uniform threshold voltage as well as the reproducibility of this FET.

• 社団法人応用物理学会の論文
• 1986-06-20

著者

• Maruo Tetsuya

  Ntt Electrical Communications Laboratories

• Arai Kunihiro

  Ntt Electrical Communications Laboratories

• YANAGAWA Fumihiko

  NTT Electrical Communications Laboratories

• Yanagawa F

  Ntt Electrical Communications Lab. Atsugi‐shi Jpn

関連論文

• A New p-Channel AlGaAs/GaAs MIS-Like Heterostructure FET Employing Two Dimensional Hole Gas
• p-Channel AlGaAs/GaAs Heterostructure FETs Employing Two-Dimensional Hole Gas
• Low-Resistance Ohmic Contacts to p-GaAs
• High Threshold Voltage Reproducibility for WSi/Al_xGa_As/GaAs MIS-Like Heterostructure FET
• Si Diffusion in Compositional Disordering of Si-Implanted GaAs / AlGaAs Superlattices Induced by Rapid Thermal Annealing : Semiconductors and Semiconductor Devices
• Compositional Disordering of Si-Implanted GaAs/AlGaAs Superlattices by Rapid Thermal Annealing
• Barrier Height in Indirect Bandgap AlGaAs/GaAs Hetero-Junction Determined with n-Semiconductor/Insulator/Semiconductor Diodes

スポンサーリンク