Barrier Height in Indirect Bandgap AlGaAs/GaAs Hetero-Junction Determined with n-Semiconductor/Insulator/Semiconductor Diodes

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概要

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• Electron transport through the GaAs/Al_xGa_<1-x>As/GaAs n-semiconductor/insulator/semiconductor diodes (x>0.45) is studied to clarify the valley which determines current conduction. The potential barrier for thermionic emission current was shown to be determined by the X valley of AlGaAs in the indirect bandgap region. It was also directly shown that conduction band discontinuity decreases when increasing the Al mole fraction of AlGaAs layer beyond the band cross over point. The most suitable Al mole fraction of undoped AlGaAs used as the gate insulator of n-channel GaAs MISFETs is concluded to be about 0.45.

• 社団法人応用物理学会の論文
• 1986-07-20

著者

• Maezawa Koichi

  Ntt Electrical Communications Laboratories

• YANAGAWA Fumihiko

  NTT Electrical Communications Laboratories

• MIZUTANI Takashi

  NTT Electrical Communications Laboratories

関連論文

• A New p-Channel AlGaAs/GaAs MIS-Like Heterostructure FET Employing Two Dimensional Hole Gas
• p-Channel AlGaAs/GaAs Heterostructure FETs Employing Two-Dimensional Hole Gas
• Low-Resistance Ohmic Contacts to p-GaAs
• High Threshold Voltage Reproducibility for WSi/Al_xGa_As/GaAs MIS-Like Heterostructure FET
• Si Diffusion in Compositional Disordering of Si-Implanted GaAs / AlGaAs Superlattices Induced by Rapid Thermal Annealing : Semiconductors and Semiconductor Devices
• Compositional Disordering of Si-Implanted GaAs/AlGaAs Superlattices by Rapid Thermal Annealing
• Barrier Height in Indirect Bandgap AlGaAs/GaAs Hetero-Junction Determined with n-Semiconductor/Insulator/Semiconductor Diodes
• An AlGaAs/InGaAs/GaAs Strained Channel MISFET

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