An AlGaAs/InGaAs/GaAs Strained Channel MISFET

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概要

• 論文の詳細を見る

• A new strained channel MISFET (SC-MISFET) with n^+-implanted source/drain regions was fabricated using lamp annealing method on an undoped AlGaAs/undoped InGaAs/undoped GaAs hetero-structure. The threshold voltage of this FIT reasonably agreed with that expected from the band diagram. This suggests that the strained InGaAs channel is scarcely disordered during high temperature annealing, and the interface state density is very small. The SC-MISFET can be expected to have additional advantages as compared with AlGaAs/GaAs MISFETs, such as an increased barrier height, an increased electron velocity.

• 社団法人応用物理学会の論文
• 1987-01-20

著者

• Maezawa Koichi

  Ntt Electrical Communications Laboratories

• ITO Hiroshi

  NTT Electrical Communications Laboratories

• MIZUTANI Takashi

  NTT Electrical Communications Laboratories

関連論文

• Extremely Low Resistance Non-Alloyed Ohmic Contacts to n-GaAs Using Compositionally Graded In_xGa_As Layers
• An Indium-Free MBE Growth of AlGaAs/GaAs HBTs
• Barrier Height in Indirect Bandgap AlGaAs/GaAs Hetero-Junction Determined with n-Semiconductor/Insulator/Semiconductor Diodes
• GaAs/In_Ga_As Double Heterojunction Bipolar Transistors with a Lattice-Mismatched Base
• An AlGaAs/InGaAs/GaAs Strained Channel MISFET

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