GaAs/In_<0.08>Ga_<0.92>As Double Heterojunction Bipolar Transistors with a Lattice-Mismatched Base

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概要

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• The critical layer thickness for misfit dislocation generation in a GaAs/InGas/GaAs DH structure is investigated experimentally. Introduction of compositionally graded layers with 300 A^° thickness into hetero-interfaces is found to increase the critical layer thickness for misfit dislocation generation about three-fold. An optimum growth temperature of about 510℃ is obtained by measuring the photoluminescence intensity of the DH structure. Using these results, a GaAs/In_<0.08>Ga_<0.92>As heterojunction bipolar transistor with a lattice mismatched InGaAs base is fabricated for the first time. The current gain of 20 is achieved at a collector current density of 2×10^4 A/cm^2.

• 社団法人応用物理学会の論文
• 1986-05-20

著者

• Ishibashi Tadao

  Ntt Electrical Communications Laboratories

• ITO Hiroshi

  NTT Electrical Communications Laboratories

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