Compositional Disordering of Si-Implanted GaAs/AlGaAs Superlattices by Rapid Thermal Annealing

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概要

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• Compositional disordering of Si-implanted GaAs/Al_<0.5>Ga_<0.5>As superlattices, followed by rapid thermal annealing (RTA), is investigated by means of sputtering Auger electron spectroscopy (AES) and Raman spectroscopy. The disordering was found to take place in the Si-implanted superlattices with a dose of 1×10^<15> cm^<-2>, annealed at 1000℃ for 4 to 30 seconds, resulting in an Al_<0.25>Ga_<0.75>As alloy. The Raman spectra showed that this alloy had a higher quality as the implanted samples were annealed for longer periods of time.

• 社団法人応用物理学会の論文
• 1987-08-20

著者

• YANAGAWA Fumihiko

  NTT Electrical Communications Laboratories

• Uematsu Masashi

  Ntt Electrical Communications Laboratories

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