Gas Source Molecular Beam Epitaxy of GaP Using PH_3 Decomposed by Low Energy Electron Impact

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概要

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• A low energy electron impact method is proposed to decompose PH_3 gas to a phosphorus beam in homoepitaxial growth of GaP. In this method the electrons emitted from a heated tungsten filament bombard PH_3 molecules supplied into a cylindrical grid. The growth rate and morphology are studied by changing the electron energy to decompose PH_3. The constant growth rate independent of the electron energy proves that the process is found to be Ga-limited growth.

• 社団法人応用物理学会の論文
• 1986-12-20

著者

• Imamura Yoshihiro

  Ntt Electrical Communications Laboratories

• Uematsu Masashi

  Ntt Electrical Communications Laboratories

関連論文

• Intermixing Process of InGaAs/InP MQW Grown by Metalorganic Molecular Beam Epitaxy at Thermal Annealing
• Electrical Characteristics of Focused-Be-Implanted GaAs Activated by Rapid Thermal Annealing
• Si Diffusion in Compositional Disordering of Si-Implanted GaAs / AlGaAs Superlattices Induced by Rapid Thermal Annealing : Semiconductors and Semiconductor Devices
• Gas Source Molecular Beam Epitaxy of GaP Using PH_3 Decomposed by Low Energy Electron Impact
• Compositional Disordering of Si-Implanted GaAs/AlGaAs Superlattices by Rapid Thermal Annealing

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