Electrical Characteristics of Focused-Be-Implanted GaAs Activated by Rapid Thermal Annealing

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概要

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• The electrical behavior of focused Be-implanted GaAs followed by rapid thermal annealing (RTA) is investigated by means of Hall-effect measurements. Focused Be ion implantation is carried out at energies of 50 to 200 keV. The electrical activation is found to decrease with higher implantation energies. The electrical properties indicate that the radiation damage induced by focused ion beam (FIB) is more difficult to be annealed out as the implantation energy increases. This behavior is different from that of unfocused ion beam (UIB) implants, which shows no significant dependence on implantation energy.

• 社団法人応用物理学会の論文
• 1987-04-20

著者

• Uematsu Masashi

  Ntt Electrical Communications Laboratories

関連論文

• Electrical Characteristics of Focused-Be-Implanted GaAs Activated by Rapid Thermal Annealing
• Si Diffusion in Compositional Disordering of Si-Implanted GaAs / AlGaAs Superlattices Induced by Rapid Thermal Annealing : Semiconductors and Semiconductor Devices
• Gas Source Molecular Beam Epitaxy of GaP Using PH_3 Decomposed by Low Energy Electron Impact
• Compositional Disordering of Si-Implanted GaAs/AlGaAs Superlattices by Rapid Thermal Annealing

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