Two-Dimensional Electron Gas at n-AlGaAs/GaAs Interface Grown by Molecular-Beam Epitaxy Using Direct-Radiation Substrate Heating
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1985-06-20
著者
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Oe Kunishige
Atsugi Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation
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Imamura Yoshihiro
NTT Atsugi Electrical Communication Laboratories
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IMAMURA Yoshihiro
Atsugi Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation
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Imamura Yoshihiro
Atsugi Electrical Communication Laboratories Nippon Telegraph And Telephone Public Corp.
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Imamura Yoshihiro
Atsugi Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation
関連論文
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- Misfit Dislocation Generation for MBE Grown GaAs on In-Doped LEC-GaAs Substrates
- Origin of Surface Defects on Molecular Beam Epitaxially Grown GaAs
- Electrical Properties of Oval Defects in GaAs Grown by MBE
- A New p-Channel AlGaAs/GaAs MIS-Like Heterostructure FET Employing Two Dimensional Hole Gas
- p-Channel AlGaAs/GaAs Heterostructure FETs Employing Two-Dimensional Hole Gas
- GaAs Radiation Damage Induced by Electron Cyclotron Resonance Plasma Etching with SF_6/CHF_3
- Two-Dimensional Electron Gas at n-AlGaAs/GaAs Interface Grown by Molecular-Beam Epitaxy Using Direct-Radiation Substrate Heating
- Deep Electron Traps in Undoped Semi-Insulating GaAs Grown by the Liquid Encapsulated Czochralski Method