GaAs Radiation Damage Induced by Electron Cyclotron Resonance Plasma Etching with SF_6/CHF_3

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1995-08-15

著者

• Imamura Yoshihiro

  NTT Atsugi Electrical Communication Laboratories

• Oda Hiroto

  Hitachi VLSI Engineering Corporation

• Imamura Yoshinori

  Central Research Laboratory, Hitachi, Ltd.

• Imamura Y

  Yamanashi Univ. Kofu Jpn

• MITANI Katsuhiko

  Fiberoptics Division, Hitachi, Limited

• KASAI Junichi

  Central Research Laboratory, Hitachi Limited

• Kasai Junichi

  Central Research Laboratory Hitachi Limited

• Oda Hiroto

  Hitachi Ulsi Engineering Corporation

• Mitani Katsuhiko

  Fiberoptics Division Hitachi Limited:kasado Works Hitachi Limited

• Imamura Yoshinori

  Central Research Laboratory

• Imamura Yoshinori

  Central Research Laboratory Hitachi Limited

関連論文

• Dislocation Propagation into MBE Grown GaAs Layers under the Condition of Misfit Dislocation Generation
• Misfit Dislocation Generation for MBE Grown GaAs on In-Doped LEC-GaAs Substrates
• Origin of Surface Defects on Molecular Beam Epitaxially Grown GaAs
• Electrical Properties of Oval Defects in GaAs Grown by MBE
• 0.15μm Gate i-AlGaAs/n-GaAs HIGFET with a 13.3 S/Vcm K-Value (Special Issue on Heterostructure Electron Devices)
• Single-Tube Color Imager Using Hydrogenated Amorphous Silicon : C-3: SENSORS
• Amorphous Silicon Image Pickup Devices : B-6: SOLAR CELLS AND AMORPHOUS DEVICES
• GaAs Radiation Damage Induced by Electron Cyclotron Resonance Plasma Etching with SF_6/CHF_3
• Diffusion of Gallium Vacancies from Low-Temperature-Grown GaAs
• Two-Dimensional Electron Gas at n-AlGaAs/GaAs Interface Grown by Molecular-Beam Epitaxy Using Direct-Radiation Substrate Heating

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