Single-Tube Color Imager Using Hydrogenated Amorphous Silicon : C-3: SENSORS
スポンサーリンク
概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1983-02-28
著者
-
HIRAI Tadaaki
Central Research Laboratory, Hitachi Ltd.
-
Imamura Yoshinori
Central Research Laboratory, Hitachi, Ltd.
-
Hirai Tadaaki
Central Research Laboratory
-
ISHIOKA Sachio
Central Research Laboratory
-
TAKASAKI Yukio
Central Research Laboratory
-
KUSANO Chushiro
Central Research Laboratory
-
NOBUTOKI Saburo
Mobara Works, Hitachi Ltd.
-
Nobutoki Saburo
Mobara Works Hitachi Ltd.
-
Imamura Yoshinori
Central Research Laboratory
関連論文
- Characteristics of a New High-Sensitivity X-Ray Imaging Tube for Video Topography
- 0.15μm Gate i-AlGaAs/n-GaAs HIGFET with a 13.3 S/Vcm K-Value (Special Issue on Heterostructure Electron Devices)
- Excess Noise in Amorphous Selenium Avalanche Photodiodes
- Carrier Generation in Photoconductivity of Anthracene
- Single-Tube Color Imager Using Hydrogenated Amorphous Silicon : C-3: SENSORS
- Amorphous Silicon Image Pickup Devices : B-6: SOLAR CELLS AND AMORPHOUS DEVICES
- SS-9 SUPER-HARP : AN ULTRA-HIGH SENSITIVE CAMERA TUBE WITH AN AVALANCHE MODE PHOTOCONDUCTIVE TARGET
- GaAs Radiation Damage Induced by Electron Cyclotron Resonance Plasma Etching with SF_6/CHF_3
- Diffusion of Gallium Vacancies from Low-Temperature-Grown GaAs
- Control of Optical Gap in a-Si_xC_: H Alloy Films Produced by Reactive Sputtering Method : II-2: AMORPHOUS FILM PREPARATION AND CHARACTERIZATION (II)
- Simulation of the Effect of Emitter Doping on the Delay Time in AlGaAs/GaAs Heterojunction Bipolar Transistors
- Formation of Thin Polyacrylonitrile Films and Their Electrical Properties
- Analyses of Noise in a Highly Sensitive Image Device